Memory effects related to deep levels in metal-oxide-semiconductor structure with nanocrystalline Si

Young Hae Kwon, C. J. Park, W. C. Lee, D. J. Fu, Y. Shon, T. W. Kang, C. Y. Hong, H. Y. Cho, Kang L. Wang

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52 Citations (Scopus)

Abstract

Nanocrystalline(nc)-Si was grown on SiO2 by rapid thermal chemical vapor deposition. The tunneling oxide layer of a thickness of 4 nm was formed on p-type Si(100) by rapid thermal oxidation at 1050°C for 30 s. Metal-oxide-semiconductor (MOS) structures were fabricated and capacitance-voltage characterization was carried out to study the memory effects of the nc-Si embedded in the MOS structure. We found the memory effect to be dominantly related to hydrogen-related traps, in addition to being influenced by the three-dimensional quantum confinement and Coulomb charge effects. Deep level transient spectroscopy reveal that the activation energies of the hydrogen-related traps are Ev+0.29eV (H1) and Ev+0.42eV (H2), and the capture cross sections are 4.70×10-16cm 2 and 1.44×10-15cm2, respectively. The presence of SiH and SiH2 bonds was confirmed by Fourier transform infrared spectroscopy.

Original languageEnglish
Pages (from-to)2502-2504
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number14
DOIs
Publication statusPublished - 2002 Apr 8

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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