Nanocrystalline(nc)-Si was grown on SiO2 by rapid thermal chemical vapor deposition. The tunneling oxide layer of a thickness of 4 nm was formed on p-type Si(100) by rapid thermal oxidation at 1050°C for 30 s. Metal-oxide-semiconductor (MOS) structures were fabricated and capacitance-voltage characterization was carried out to study the memory effects of the nc-Si embedded in the MOS structure. We found the memory effect to be dominantly related to hydrogen-related traps, in addition to being influenced by the three-dimensional quantum confinement and Coulomb charge effects. Deep level transient spectroscopy reveal that the activation energies of the hydrogen-related traps are Ev+0.29eV (H1) and Ev+0.42eV (H2), and the capture cross sections are 4.70×10-16cm 2 and 1.44×10-15cm2, respectively. The presence of SiH and SiH2 bonds was confirmed by Fourier transform infrared spectroscopy.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)