Memory effects related to deep levels in metal-oxide-semiconductor structure with nanocrystalline Si

Young Hae Kwon; C. J. Park; W. C. Lee; D. J. Fu; Y. Shon; T. W. Kang; C. Y. Hong; H. Y. Cho; Kang L. Wang

doi:10.1063/1.1467617

Memory effects related to deep levels in metal-oxide-semiconductor structure with nanocrystalline Si

Young Hae Kwon
, C. J. Park
, W. C. Lee
, D. J. Fu
, Y. Shon
, T. W. Kang
, C. Y. Hong
, H. Y. Cho
, Kang L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

54 Citations (Scopus)

Abstract

Nanocrystalline(nc)-Si was grown on SiO₂ by rapid thermal chemical vapor deposition. The tunneling oxide layer of a thickness of 4 nm was formed on p-type Si(100) by rapid thermal oxidation at 1050°C for 30 s. Metal-oxide-semiconductor (MOS) structures were fabricated and capacitance-voltage characterization was carried out to study the memory effects of the nc-Si embedded in the MOS structure. We found the memory effect to be dominantly related to hydrogen-related traps, in addition to being influenced by the three-dimensional quantum confinement and Coulomb charge effects. Deep level transient spectroscopy reveal that the activation energies of the hydrogen-related traps are E_v+0.29eV (H1) and E_v+0.42eV (H2), and the capture cross sections are 4.70×10^-16cm ² and 1.44×10^-15cm², respectively. The presence of SiH and SiH₂ bonds was confirmed by Fourier transform infrared spectroscopy.

Original language	English
Pages (from-to)	2502-2504
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	14
DOIs	https://doi.org/10.1063/1.1467617
Publication status	Published - 2002 Apr 8

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1467617

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@article{5bdff2ff7cc745adb5dc4e4b2f7559e7,

title = "Memory effects related to deep levels in metal-oxide-semiconductor structure with nanocrystalline Si",

abstract = "Nanocrystalline(nc)-Si was grown on SiO2 by rapid thermal chemical vapor deposition. The tunneling oxide layer of a thickness of 4 nm was formed on p-type Si(100) by rapid thermal oxidation at 1050°C for 30 s. Metal-oxide-semiconductor (MOS) structures were fabricated and capacitance-voltage characterization was carried out to study the memory effects of the nc-Si embedded in the MOS structure. We found the memory effect to be dominantly related to hydrogen-related traps, in addition to being influenced by the three-dimensional quantum confinement and Coulomb charge effects. Deep level transient spectroscopy reveal that the activation energies of the hydrogen-related traps are Ev+0.29eV (H1) and Ev+0.42eV (H2), and the capture cross sections are 4.70×10-16cm 2 and 1.44×10-15cm2, respectively. The presence of SiH and SiH2 bonds was confirmed by Fourier transform infrared spectroscopy.",

author = "Kwon, \{Young Hae\} and Park, \{C. J.\} and Lee, \{W. C.\} and Fu, \{D. J.\} and Y. Shon and Kang, \{T. W.\} and Hong, \{C. Y.\} and Cho, \{H. Y.\} and Wang, \{Kang L.\}",

year = "2002",

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doi = "10.1063/1.1467617",

language = "English",

volume = "80",

pages = "2502--2504",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Memory effects related to deep levels in metal-oxide-semiconductor structure with nanocrystalline Si

AU - Kwon, Young Hae

AU - Park, C. J.

AU - Lee, W. C.

AU - Fu, D. J.

AU - Shon, Y.

AU - Kang, T. W.

AU - Hong, C. Y.

AU - Cho, H. Y.

AU - Wang, Kang L.

PY - 2002/4/8

Y1 - 2002/4/8

N2 - Nanocrystalline(nc)-Si was grown on SiO2 by rapid thermal chemical vapor deposition. The tunneling oxide layer of a thickness of 4 nm was formed on p-type Si(100) by rapid thermal oxidation at 1050°C for 30 s. Metal-oxide-semiconductor (MOS) structures were fabricated and capacitance-voltage characterization was carried out to study the memory effects of the nc-Si embedded in the MOS structure. We found the memory effect to be dominantly related to hydrogen-related traps, in addition to being influenced by the three-dimensional quantum confinement and Coulomb charge effects. Deep level transient spectroscopy reveal that the activation energies of the hydrogen-related traps are Ev+0.29eV (H1) and Ev+0.42eV (H2), and the capture cross sections are 4.70×10-16cm 2 and 1.44×10-15cm2, respectively. The presence of SiH and SiH2 bonds was confirmed by Fourier transform infrared spectroscopy.

AB - Nanocrystalline(nc)-Si was grown on SiO2 by rapid thermal chemical vapor deposition. The tunneling oxide layer of a thickness of 4 nm was formed on p-type Si(100) by rapid thermal oxidation at 1050°C for 30 s. Metal-oxide-semiconductor (MOS) structures were fabricated and capacitance-voltage characterization was carried out to study the memory effects of the nc-Si embedded in the MOS structure. We found the memory effect to be dominantly related to hydrogen-related traps, in addition to being influenced by the three-dimensional quantum confinement and Coulomb charge effects. Deep level transient spectroscopy reveal that the activation energies of the hydrogen-related traps are Ev+0.29eV (H1) and Ev+0.42eV (H2), and the capture cross sections are 4.70×10-16cm 2 and 1.44×10-15cm2, respectively. The presence of SiH and SiH2 bonds was confirmed by Fourier transform infrared spectroscopy.

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DO - 10.1063/1.1467617

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AN - SCOPUS:79955991981

SN - 0003-6951

VL - 80

SP - 2502

EP - 2504

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Memory effects related to deep levels in metal-oxide-semiconductor structure with nanocrystalline Si

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