Memory mechanisms of vertical organic memory transistors

Li Zhen Yu, Hung Chun Chen, Ching Ting Lee

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


Three-terminal vertical organic memory transistors were fabricated to investigate the memory mechanisms and the relation between memory behavior and applied electrical field. The 9,10-di(2-naphthyl)anthracene was used as the active channel layer for the organic memory transistors. In both the ON and OFF state of the organic memory transistors, the drain-source currents (I DS) were modulated by applying various gate-source voltages (V GS). The switching drain-source voltage (VDS) decreased with an increase in applied VGS voltages. The ON/OFF IDS current ratio of the organic memory transistors could be modulated up to the maximum value of 2.02× 105 by applying VGS voltage bias.

Original languageEnglish
Article number233301
JournalApplied Physics Letters
Issue number23
Publication statusPublished - 2010

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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