Memory mechanisms of vertical organic memory transistors

Li Zhen Yu; Hung Chun Chen; Ching Ting Lee

doi:10.1063/1.3449120

Memory mechanisms of vertical organic memory transistors

Li Zhen Yu, Hung Chun Chen, Ching Ting Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Three-terminal vertical organic memory transistors were fabricated to investigate the memory mechanisms and the relation between memory behavior and applied electrical field. The 9,10-di(2-naphthyl)anthracene was used as the active channel layer for the organic memory transistors. In both the ON and OFF state of the organic memory transistors, the drain-source currents (I _DS) were modulated by applying various gate-source voltages (V _GS). The switching drain-source voltage (V_DS) decreased with an increase in applied V_GS voltages. The ON/OFF I_DS current ratio of the organic memory transistors could be modulated up to the maximum value of 2.02× 10⁵ by applying VGS voltage bias.

Original language	English
Article number	233301
Journal	Applied Physics Letters
Volume	96
Issue number	23
DOIs	https://doi.org/10.1063/1.3449120
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3449120

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abstract = "Three-terminal vertical organic memory transistors were fabricated to investigate the memory mechanisms and the relation between memory behavior and applied electrical field. The 9,10-di(2-naphthyl)anthracene was used as the active channel layer for the organic memory transistors. In both the ON and OFF state of the organic memory transistors, the drain-source currents (I DS) were modulated by applying various gate-source voltages (V GS). The switching drain-source voltage (VDS) decreased with an increase in applied VGS voltages. The ON/OFF IDS current ratio of the organic memory transistors could be modulated up to the maximum value of 2.02× 105 by applying VGS voltage bias.",

author = "Yu, {Li Zhen} and Chen, {Hung Chun} and Lee, {Ching Ting}",

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AU - Chen, Hung Chun

AU - Lee, Ching Ting

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PY - 2010

Y1 - 2010

N2 - Three-terminal vertical organic memory transistors were fabricated to investigate the memory mechanisms and the relation between memory behavior and applied electrical field. The 9,10-di(2-naphthyl)anthracene was used as the active channel layer for the organic memory transistors. In both the ON and OFF state of the organic memory transistors, the drain-source currents (I DS) were modulated by applying various gate-source voltages (V GS). The switching drain-source voltage (VDS) decreased with an increase in applied VGS voltages. The ON/OFF IDS current ratio of the organic memory transistors could be modulated up to the maximum value of 2.02× 105 by applying VGS voltage bias.

AB - Three-terminal vertical organic memory transistors were fabricated to investigate the memory mechanisms and the relation between memory behavior and applied electrical field. The 9,10-di(2-naphthyl)anthracene was used as the active channel layer for the organic memory transistors. In both the ON and OFF state of the organic memory transistors, the drain-source currents (I DS) were modulated by applying various gate-source voltages (V GS). The switching drain-source voltage (VDS) decreased with an increase in applied VGS voltages. The ON/OFF IDS current ratio of the organic memory transistors could be modulated up to the maximum value of 2.02× 105 by applying VGS voltage bias.

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Memory mechanisms of vertical organic memory transistors

Abstract

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