TY - JOUR
T1 - Memory properties of (110) preferring oriented CH3NH3PbI3 perovskite film prepared using PbS-buffered three-step growth method
AU - Wu, Hsuan Ta
AU - Chen, Yung Fu
AU - Shih, Chuan Feng
AU - Leu, Ching Chich
AU - Wu, Shih Hsiung
N1 - Funding Information:
The authors are grateful for the support of the Ministry of Science and Technology of the Republic of China under Contract No. MOST 104-2628-E-390-003-MY3 , MOST 102-2221-E-006-238-MY3 , MOST 105-2221-E-006-220 , and Ministry of Economic Affairs ( Department of Industrial Technology ), Taiwan.
Funding Information:
The authors are grateful for the support of the Ministry of Science and Technology of the Republic of China under Contract No. MOST 104-2628-E-390-003-MY3, MOST 102-2221-E-006-238-MY3, MOST 105-2221-E-006-220, and Ministry of Economic Affairs (Department of Industrial Technology), Taiwan.
Publisher Copyright:
© 2018 Elsevier B.V.
PY - 2018/8/30
Y1 - 2018/8/30
N2 - We proposed a PbS-buffered method to fabricate the (110)-textured CH3NH3PbI3 (MAPbI3) film by three-step conversion (PbS → PbI2 → MAPbI3). The PbS buffer layer comprised numerous polyhedron particles was prepared on top of the Glass/indium tin oxide (ITO) via a chemical bath deposition process. Firstly, the PbS was converted to PbI2 by I2 gas annealing that caused a dense and (001)-preferred PbI2. Secondly, the PbI2 was turned into a MAPbI3 film by MAI vapor annealing, of which the degree of preferring orientation of the (110) face was higher and the micrometer grains was more compact than that was prepared by the conventional two-step (PbI2 → MAPbI3) spin-coated MAPbI3. The dense and (001)-textured PbI2, which was converted from the PbS with an appropriate condition, was the key to obtain the (110)-preferred MAPbI3 with a good quality. For comparative study, the memory devices (Glass/ITO/MAPbI3/poly methyl methacrylate (PMMA)/Al) made by the PbS-buffered MAPbI3 and the spin-coated MAPbI3 were both studied. As a result, both of them showed bipolar resistive switching behaviors with an ON/OFF ratio of ~102; whereas the leakage current of the PbS-buffered MAPbI3 sample was 3 orders lower than that of the spin-coated one. The large crystalline grain, high-compact structure and (110) preferred texture of the PbS-buffered MAPbI3 were believed to contribute to such a low leakage current, which is beneficial for the memory application.
AB - We proposed a PbS-buffered method to fabricate the (110)-textured CH3NH3PbI3 (MAPbI3) film by three-step conversion (PbS → PbI2 → MAPbI3). The PbS buffer layer comprised numerous polyhedron particles was prepared on top of the Glass/indium tin oxide (ITO) via a chemical bath deposition process. Firstly, the PbS was converted to PbI2 by I2 gas annealing that caused a dense and (001)-preferred PbI2. Secondly, the PbI2 was turned into a MAPbI3 film by MAI vapor annealing, of which the degree of preferring orientation of the (110) face was higher and the micrometer grains was more compact than that was prepared by the conventional two-step (PbI2 → MAPbI3) spin-coated MAPbI3. The dense and (001)-textured PbI2, which was converted from the PbS with an appropriate condition, was the key to obtain the (110)-preferred MAPbI3 with a good quality. For comparative study, the memory devices (Glass/ITO/MAPbI3/poly methyl methacrylate (PMMA)/Al) made by the PbS-buffered MAPbI3 and the spin-coated MAPbI3 were both studied. As a result, both of them showed bipolar resistive switching behaviors with an ON/OFF ratio of ~102; whereas the leakage current of the PbS-buffered MAPbI3 sample was 3 orders lower than that of the spin-coated one. The large crystalline grain, high-compact structure and (110) preferred texture of the PbS-buffered MAPbI3 were believed to contribute to such a low leakage current, which is beneficial for the memory application.
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U2 - 10.1016/j.tsf.2018.06.032
DO - 10.1016/j.tsf.2018.06.032
M3 - Article
AN - SCOPUS:85048752276
SN - 0040-6090
VL - 660
SP - 320
EP - 327
JO - Thin Solid Films
JF - Thin Solid Films
ER -