Memory repair by die stacking with through silicon vias

Yung Fa Chou, Ding Ming Kwai, Cheng Wen Wu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

As we adopt more advanced process technologies, the volume production of memory devices, such as DRAM and Flash, becomes more difficult. It seems inevitable that during the ramp-up period, the initial manufacturing yield will be lower, and it takes more time and effort to improve the yield to a reasonable level. Although redundancy can be used to improve the yield eventually, the reserved spares may not be enough at the beginning, so most dies may be irreparable. We propose the usage of three-dimensional (3D) integration to achieve yield enhancement. Through silicon vias (TSVs) patch good memory blocks in a bad die with those in another bad die by bonding them together and enabling the built-in circuit. The die stack has the same functionality, though slightly increases delay and power. Nevertheless, if the production yield takes a long time to achieve, the 3D patched memory is deemed to be a transitional-period product. It does help to shorten time-to-market and make the irreparable memories profitable.

Original languageEnglish
Title of host publicationProceedings of the 2009 IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2009
Pages53-58
Number of pages6
DOIs
Publication statusPublished - 2009 Dec 25
Event2009 IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2009 - Hsinchu, Taiwan
Duration: 2009 Aug 312009 Sep 2

Publication series

NameProceedings of the 2009 IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2009

Conference

Conference2009 IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2009
CountryTaiwan
CityHsinchu
Period09-08-3109-09-02

All Science Journal Classification (ASJC) codes

  • Computational Theory and Mathematics
  • Computer Science Applications
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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