MEMS Residual Stress Characterization

Methodology and Perspective

Kuo-Shen Chen, Kuang Shun Ou

Research output: Chapter in Book/Report/Conference proceedingChapter

2 Citations (Scopus)

Abstract

Residual stress characterization in MEMS structures is discussed in this chapter. Residual stress characterization in MEMS structures is of inherent importance in various respects. The existence of residual stresses essentially changes the performance and reduces the structural integrity and longevity of MEMS devices. MEMS techniques actually provide a new tool for studying the mechanical properties of materials such as modulus, hardness, and state of stresses. The existences of residual stresses can seriously influence the reliability and dynamical characteristics of devices. Residual stress occurs in materials and mechanical components during manufacturing from many film growth processes. The residual stress characteristic techniques related to MEMS can be classified as following: Wafer-level curvature measurement, Material-level nondestructive measurement, Residual stress measurement using MEMS specimens or structures, Material-level destructive measurement. The most widely applied or acknowledged thin-film stress measurement method is the curvature measurement of beam or plate structures. Bulge test is a method used to determine the material properties of thin films. The sudden buckling collapse due to excessive compressive stresses has been used as a method to evaluate the lower bound of residual stress level of elastic MEMS structures for many years. Raman spectroscopy allows the identification of the material and yields information about phonon frequencies, energies of electron states and electron-phonon interaction, carrier concentration, impurity content, composition, crystal structure, crystal orientation, temperature, and mechanical strain. The M-Test concept is based on an array of microelectromechanical test structures, fixed beams, and clamped diaphragms of varying dimensions. Indentation testing is a simple method to determine material properties such as Young's modulus and micro-hardness, fracture strength, and toughness.

Original languageEnglish
Title of host publicationHandbook of Silicon Based MEMS Materials and Technologies
PublisherElsevier Inc.
Pages305-316
Number of pages12
ISBN (Print)9780815515944
DOIs
Publication statusPublished - 2010 Dec 1

Fingerprint

MEMS
Residual stresses
Stress measurement
Fracture toughness
Materials properties
Thin films
Electron-phonon interactions
Structural integrity
Film growth
Diaphragms
Compressive stress
Indentation
Crystal orientation
Microhardness
Electron energy levels
Buckling
Carrier concentration
Raman spectroscopy
Crystal structure
Elastic moduli

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Chen, K-S., & Ou, K. S. (2010). MEMS Residual Stress Characterization: Methodology and Perspective. In Handbook of Silicon Based MEMS Materials and Technologies (pp. 305-316). Elsevier Inc.. https://doi.org/10.1016/B978-0-8155-1594-4.00018-8
Chen, Kuo-Shen ; Ou, Kuang Shun. / MEMS Residual Stress Characterization : Methodology and Perspective. Handbook of Silicon Based MEMS Materials and Technologies. Elsevier Inc., 2010. pp. 305-316
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Chen, K-S & Ou, KS 2010, MEMS Residual Stress Characterization: Methodology and Perspective. in Handbook of Silicon Based MEMS Materials and Technologies. Elsevier Inc., pp. 305-316. https://doi.org/10.1016/B978-0-8155-1594-4.00018-8

MEMS Residual Stress Characterization : Methodology and Perspective. / Chen, Kuo-Shen; Ou, Kuang Shun.

Handbook of Silicon Based MEMS Materials and Technologies. Elsevier Inc., 2010. p. 305-316.

Research output: Chapter in Book/Report/Conference proceedingChapter

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Chen K-S, Ou KS. MEMS Residual Stress Characterization: Methodology and Perspective. In Handbook of Silicon Based MEMS Materials and Technologies. Elsevier Inc. 2010. p. 305-316 https://doi.org/10.1016/B978-0-8155-1594-4.00018-8