MESFET performance and limitations of optimized GaAs strained buffer layer grown on InP by molecular beam epitaxy

C. T. Lee, H. P. Shiao, Y. C. Chou

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The effects of the thickness of the GaAs strained buffer layer on the electrical performance of GaAs field effect transistors are demonstrated. The GaAs MESFET has been fabricated on GaAs/InP epitaxial material grown by molecular beam epitaxy. From experimental results a minimum thickness of the strained buffer layer appears to be needed to compensate the effect of misfit dislocation due to lattice mismatch between the GaAs and InP substrate. The minimum required thickness amounts to 2 μm. The electron mobility and transconductance behavior demonstrate the effects of thickness of the strained buffer layer.

Original languageEnglish
Pages (from-to)1529-1531
Number of pages3
JournalSolid State Electronics
Volume38
Issue number8
DOIs
Publication statusPublished - 1995 Aug

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'MESFET performance and limitations of optimized GaAs strained buffer layer grown on InP by molecular beam epitaxy'. Together they form a unique fingerprint.

  • Cite this