Metal-oxide-semiconductor devices using Ga2O3 dielectrics on n-type GaN

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The growth of Ga2O3 oxide layers on n-type GaN, using a photoelectrochemical method involving a He-Cd laser was discussed in the article. The performance of the resultant metal-oxide-semiconductor devices based on the grown Ga2O3 layer was demonstrated. A high forward and reverse breakdown electric fields of 2.80 MV/cm and 5.70 MV/cm, respectively were obtained.

Original languageEnglish
Pages (from-to)4304-4306
Number of pages3
JournalApplied Physics Letters
Issue number24
Publication statusPublished - 2003 Jun 16

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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