The growth of Ga2O3 oxide layers on n-type GaN, using a photoelectrochemical method involving a He-Cd laser was discussed in the article. The performance of the resultant metal-oxide-semiconductor devices based on the grown Ga2O3 layer was demonstrated. A high forward and reverse breakdown electric fields of 2.80 MV/cm and 5.70 MV/cm, respectively were obtained.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)