Metal-oxide-semiconductor devices using Ga2O3 dielectrics on n-type GaN

Ching Ting Lee; Hong Wei Chen; Hsin Ying Lee

doi:10.1063/1.1584520

Metal-oxide-semiconductor devices using Ga₂O₃ dielectrics on n-type GaN

Ching Ting Lee, Hong Wei Chen, Hsin Ying Lee

Department of Photonics

Research output: Contribution to journal › Article › peer-review

165 Citations (Scopus)

Abstract

The growth of Ga₂O₃ oxide layers on n-type GaN, using a photoelectrochemical method involving a He-Cd laser was discussed in the article. The performance of the resultant metal-oxide-semiconductor devices based on the grown Ga₂O₃ layer was demonstrated. A high forward and reverse breakdown electric fields of 2.80 MV/cm and 5.70 MV/cm, respectively were obtained.

Original language	English
Pages (from-to)	4304-4306
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	24
DOIs	https://doi.org/10.1063/1.1584520
Publication status	Published - 2003 Jun 16

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1584520

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title = "Metal-oxide-semiconductor devices using Ga2O3 dielectrics on n-type GaN",

abstract = "The growth of Ga2O3 oxide layers on n-type GaN, using a photoelectrochemical method involving a He-Cd laser was discussed in the article. The performance of the resultant metal-oxide-semiconductor devices based on the grown Ga2O3 layer was demonstrated. A high forward and reverse breakdown electric fields of 2.80 MV/cm and 5.70 MV/cm, respectively were obtained.",

author = "Lee, {Ching Ting} and Chen, {Hong Wei} and Lee, {Hsin Ying}",

year = "2003",

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N2 - The growth of Ga2O3 oxide layers on n-type GaN, using a photoelectrochemical method involving a He-Cd laser was discussed in the article. The performance of the resultant metal-oxide-semiconductor devices based on the grown Ga2O3 layer was demonstrated. A high forward and reverse breakdown electric fields of 2.80 MV/cm and 5.70 MV/cm, respectively were obtained.

AB - The growth of Ga2O3 oxide layers on n-type GaN, using a photoelectrochemical method involving a He-Cd laser was discussed in the article. The performance of the resultant metal-oxide-semiconductor devices based on the grown Ga2O3 layer was demonstrated. A high forward and reverse breakdown electric fields of 2.80 MV/cm and 5.70 MV/cm, respectively were obtained.

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Metal-oxide-semiconductor devices using Ga₂O₃ dielectrics on n-type GaN

Abstract

All Science Journal Classification (ASJC) codes

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