Metal-oxide-semiconductor devices using Ga2O3 dielectrics on n-type GaN

Research output: Contribution to journalArticlepeer-review

142 Citations (Scopus)

Abstract

The growth of Ga2O3 oxide layers on n-type GaN, using a photoelectrochemical method involving a He-Cd laser was discussed in the article. The performance of the resultant metal-oxide-semiconductor devices based on the grown Ga2O3 layer was demonstrated. A high forward and reverse breakdown electric fields of 2.80 MV/cm and 5.70 MV/cm, respectively were obtained.

Original languageEnglish
Pages (from-to)4304-4306
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number24
DOIs
Publication statusPublished - 2003 Jun 16

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Metal-oxide-semiconductor devices using Ga<sub>2</sub>O<sub>3</sub> dielectrics on n-type GaN'. Together they form a unique fingerprint.

Cite this