@inproceedings{87baf6f642264d81a0b4f42a9bc69cf8,
title = "Metal-semiconductor-metal photodetectors using widegap semiconductor capping layer",
abstract = "To improve the Schottky contact performances and carrier confinement, we employed the wide bandgap material InAlGaP for the capping in the metal-semiconductor-metal photodetectors (MSM-PDs). The electrical behaviors of InAlGaP/GaAs MSM-PD are studied by reverse dark current-voltage measurements at different temperatures. The reverse characteristics of the Schottky contact are examined by taking into account the dependence of the barrier height on the electric field in the depletion region and hence on the applied bias. We investigated the possibilities of evaluating the main Schottky contact parameters straight on the MSM-PD structure with and without capping layer InAlGaP. We also measured the relationship between the photoresponsivity and difference photon wavelength.",
author = "Lee, {Hsin Ying} and Lee, {Ching Ting}",
year = "2003",
month = jan,
day = "1",
doi = "10.1109/COS.2003.1278154",
language = "English",
series = "Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "15--18",
editor = "Chan, {K. T.} and Kwok, {H. S.}",
booktitle = "Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003",
address = "United States",
note = "6th Chinese Optoelectronics Symposium, COES 2003 ; Conference date: 12-09-2003 Through 14-09-2003",
}