Metal-semiconductor-metal photodetectors using widegap semiconductor capping layer

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To improve the Schottky contact performances and carrier confinement, we employed the wide bandgap material InAlGaP for the capping in the metal-semiconductor-metal photodetectors (MSM-PDs). The electrical behaviors of InAlGaP/GaAs MSM-PD are studied by reverse dark current-voltage measurements at different temperatures. The reverse characteristics of the Schottky contact are examined by taking into account the dependence of the barrier height on the electric field in the depletion region and hence on the applied bias. We investigated the possibilities of evaluating the main Schottky contact parameters straight on the MSM-PD structure with and without capping layer InAlGaP. We also measured the relationship between the photoresponsivity and difference photon wavelength.

Original languageEnglish
Title of host publicationProceedings of the 6th Chinese Optoelectronics Symposium, COES 2003
EditorsK. T. Chan, H. S. Kwok
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages15-18
Number of pages4
ISBN (Electronic)0780378873, 9780780378872
DOIs
Publication statusPublished - 2003 Jan 1
Event6th Chinese Optoelectronics Symposium, COES 2003 - Hong Kong, China
Duration: 2003 Sep 122003 Sep 14

Publication series

NameProceedings of the 6th Chinese Optoelectronics Symposium, COES 2003

Other

Other6th Chinese Optoelectronics Symposium, COES 2003
CountryChina
CityHong Kong
Period03-09-1203-09-14

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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