Metal-semiconductor-metal photodetectors with in AlGaP capping and buffer layers

Ching Ting Lee; Hsin Ying Lee

doi:10.1109/LED.2003.815427

Metal-semiconductor-metal photodetectors with in AlGaP capping and buffer layers

Ching Ting Lee, Hsin Ying Lee

Department of Photonics

Research output: Contribution to journal › Letter › peer-review

3 Citations (Scopus)

Abstract

To improve the Schottky contact performance and carrier confinement of GaAs metal-semiconductor-metal photodetectors (MSM-PDs), we employed the wide bandgap material, In_0.5(Al_0.66Ga_0.34)_0.5P, for the capping and buffer layers. We directly evaluated the Schottky contact parameters on the MSM-PD structure. The reverse characteristics of the Schottky contacts were examined by taking into account the Schottky barrier height depended on the electric field in the depletion region, and hence on the applied bias. The ideality factor and Schottky barrier height of Ti-Pt-Au contacts to In_0.5(Al_0.66Ga_0.34)_0.5P are 1.02 and 1.05 eV, respectively. Extremely low dark currents of 70 and 620 pA were obtained for these MSM-PDs when they were operated at a reverse bias of -10 V at room temperature and at 70°C, respectively.

Original language	English
Pages (from-to)	532-534
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	24
Issue number	9
DOIs	https://doi.org/10.1109/LED.2003.815427
Publication status	Published - 2003 Sep 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2003.815427

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title = "Metal-semiconductor-metal photodetectors with in AlGaP capping and buffer layers",

abstract = "To improve the Schottky contact performance and carrier confinement of GaAs metal-semiconductor-metal photodetectors (MSM-PDs), we employed the wide bandgap material, In0.5(Al0.66Ga0.34)0.5P, for the capping and buffer layers. We directly evaluated the Schottky contact parameters on the MSM-PD structure. The reverse characteristics of the Schottky contacts were examined by taking into account the Schottky barrier height depended on the electric field in the depletion region, and hence on the applied bias. The ideality factor and Schottky barrier height of Ti-Pt-Au contacts to In0.5(Al0.66Ga0.34)0.5P are 1.02 and 1.05 eV, respectively. Extremely low dark currents of 70 and 620 pA were obtained for these MSM-PDs when they were operated at a reverse bias of -10 V at room temperature and at 70°C, respectively.",

author = "Lee, {Ching Ting} and Lee, {Hsin Ying}",

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AU - Lee, Ching Ting

AU - Lee, Hsin Ying

PY - 2003/9/1

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N2 - To improve the Schottky contact performance and carrier confinement of GaAs metal-semiconductor-metal photodetectors (MSM-PDs), we employed the wide bandgap material, In0.5(Al0.66Ga0.34)0.5P, for the capping and buffer layers. We directly evaluated the Schottky contact parameters on the MSM-PD structure. The reverse characteristics of the Schottky contacts were examined by taking into account the Schottky barrier height depended on the electric field in the depletion region, and hence on the applied bias. The ideality factor and Schottky barrier height of Ti-Pt-Au contacts to In0.5(Al0.66Ga0.34)0.5P are 1.02 and 1.05 eV, respectively. Extremely low dark currents of 70 and 620 pA were obtained for these MSM-PDs when they were operated at a reverse bias of -10 V at room temperature and at 70°C, respectively.

AB - To improve the Schottky contact performance and carrier confinement of GaAs metal-semiconductor-metal photodetectors (MSM-PDs), we employed the wide bandgap material, In0.5(Al0.66Ga0.34)0.5P, for the capping and buffer layers. We directly evaluated the Schottky contact parameters on the MSM-PD structure. The reverse characteristics of the Schottky contacts were examined by taking into account the Schottky barrier height depended on the electric field in the depletion region, and hence on the applied bias. The ideality factor and Schottky barrier height of Ti-Pt-Au contacts to In0.5(Al0.66Ga0.34)0.5P are 1.02 and 1.05 eV, respectively. Extremely low dark currents of 70 and 620 pA were obtained for these MSM-PDs when they were operated at a reverse bias of -10 V at room temperature and at 70°C, respectively.

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