Metal-semiconductor-metal photodetectors with in AlGaP capping and buffer layers

Research output: Contribution to journalLetter

3 Citations (Scopus)

Abstract

To improve the Schottky contact performance and carrier confinement of GaAs metal-semiconductor-metal photodetectors (MSM-PDs), we employed the wide bandgap material, In0.5(Al0.66Ga0.34)0.5P, for the capping and buffer layers. We directly evaluated the Schottky contact parameters on the MSM-PD structure. The reverse characteristics of the Schottky contacts were examined by taking into account the Schottky barrier height depended on the electric field in the depletion region, and hence on the applied bias. The ideality factor and Schottky barrier height of Ti-Pt-Au contacts to In0.5(Al0.66Ga0.34)0.5P are 1.02 and 1.05 eV, respectively. Extremely low dark currents of 70 and 620 pA were obtained for these MSM-PDs when they were operated at a reverse bias of -10 V at room temperature and at 70°C, respectively.

Original languageEnglish
Pages (from-to)532-534
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number9
DOIs
Publication statusPublished - 2003 Sep 1

Fingerprint

Buffer layers
Photodetectors
Metals
Semiconductor materials
Plasma confinement
Dark currents
Energy gap
Electric fields

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

@article{b0082bfcb2664796966f99fcf0b18dca,
title = "Metal-semiconductor-metal photodetectors with in AlGaP capping and buffer layers",
abstract = "To improve the Schottky contact performance and carrier confinement of GaAs metal-semiconductor-metal photodetectors (MSM-PDs), we employed the wide bandgap material, In0.5(Al0.66Ga0.34)0.5P, for the capping and buffer layers. We directly evaluated the Schottky contact parameters on the MSM-PD structure. The reverse characteristics of the Schottky contacts were examined by taking into account the Schottky barrier height depended on the electric field in the depletion region, and hence on the applied bias. The ideality factor and Schottky barrier height of Ti-Pt-Au contacts to In0.5(Al0.66Ga0.34)0.5P are 1.02 and 1.05 eV, respectively. Extremely low dark currents of 70 and 620 pA were obtained for these MSM-PDs when they were operated at a reverse bias of -10 V at room temperature and at 70°C, respectively.",
author = "Lee, {Ching Ting} and Lee, {Hsin Ying}",
year = "2003",
month = "9",
day = "1",
doi = "10.1109/LED.2003.815427",
language = "English",
volume = "24",
pages = "532--534",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",

}

Metal-semiconductor-metal photodetectors with in AlGaP capping and buffer layers. / Lee, Ching Ting; Lee, Hsin Ying.

In: IEEE Electron Device Letters, Vol. 24, No. 9, 01.09.2003, p. 532-534.

Research output: Contribution to journalLetter

TY - JOUR

T1 - Metal-semiconductor-metal photodetectors with in AlGaP capping and buffer layers

AU - Lee, Ching Ting

AU - Lee, Hsin Ying

PY - 2003/9/1

Y1 - 2003/9/1

N2 - To improve the Schottky contact performance and carrier confinement of GaAs metal-semiconductor-metal photodetectors (MSM-PDs), we employed the wide bandgap material, In0.5(Al0.66Ga0.34)0.5P, for the capping and buffer layers. We directly evaluated the Schottky contact parameters on the MSM-PD structure. The reverse characteristics of the Schottky contacts were examined by taking into account the Schottky barrier height depended on the electric field in the depletion region, and hence on the applied bias. The ideality factor and Schottky barrier height of Ti-Pt-Au contacts to In0.5(Al0.66Ga0.34)0.5P are 1.02 and 1.05 eV, respectively. Extremely low dark currents of 70 and 620 pA were obtained for these MSM-PDs when they were operated at a reverse bias of -10 V at room temperature and at 70°C, respectively.

AB - To improve the Schottky contact performance and carrier confinement of GaAs metal-semiconductor-metal photodetectors (MSM-PDs), we employed the wide bandgap material, In0.5(Al0.66Ga0.34)0.5P, for the capping and buffer layers. We directly evaluated the Schottky contact parameters on the MSM-PD structure. The reverse characteristics of the Schottky contacts were examined by taking into account the Schottky barrier height depended on the electric field in the depletion region, and hence on the applied bias. The ideality factor and Schottky barrier height of Ti-Pt-Au contacts to In0.5(Al0.66Ga0.34)0.5P are 1.02 and 1.05 eV, respectively. Extremely low dark currents of 70 and 620 pA were obtained for these MSM-PDs when they were operated at a reverse bias of -10 V at room temperature and at 70°C, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0141675946&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0141675946&partnerID=8YFLogxK

U2 - 10.1109/LED.2003.815427

DO - 10.1109/LED.2003.815427

M3 - Letter

AN - SCOPUS:0141675946

VL - 24

SP - 532

EP - 534

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 9

ER -