Abstract
To improve the Schottky contact performance and carrier confinement of GaAs metal-semiconductor-metal photodetectors (MSM-PDs), we employed the wide bandgap material, In0.5(Al0.66Ga0.34)0.5P, for the capping and buffer layers. We directly evaluated the Schottky contact parameters on the MSM-PD structure. The reverse characteristics of the Schottky contacts were examined by taking into account the Schottky barrier height depended on the electric field in the depletion region, and hence on the applied bias. The ideality factor and Schottky barrier height of Ti-Pt-Au contacts to In0.5(Al0.66Ga0.34)0.5P are 1.02 and 1.05 eV, respectively. Extremely low dark currents of 70 and 620 pA were obtained for these MSM-PDs when they were operated at a reverse bias of -10 V at room temperature and at 70°C, respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 532-534 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 24 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2003 Sep 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Metal-semiconductor-metal photodetectors with in AlGaP capping and buffer layers. / Lee, Ching Ting; Lee, Hsin Ying.
In: IEEE Electron Device Letters, Vol. 24, No. 9, 01.09.2003, p. 532-534.Research output: Contribution to journal › Letter
TY - JOUR
T1 - Metal-semiconductor-metal photodetectors with in AlGaP capping and buffer layers
AU - Lee, Ching Ting
AU - Lee, Hsin Ying
PY - 2003/9/1
Y1 - 2003/9/1
N2 - To improve the Schottky contact performance and carrier confinement of GaAs metal-semiconductor-metal photodetectors (MSM-PDs), we employed the wide bandgap material, In0.5(Al0.66Ga0.34)0.5P, for the capping and buffer layers. We directly evaluated the Schottky contact parameters on the MSM-PD structure. The reverse characteristics of the Schottky contacts were examined by taking into account the Schottky barrier height depended on the electric field in the depletion region, and hence on the applied bias. The ideality factor and Schottky barrier height of Ti-Pt-Au contacts to In0.5(Al0.66Ga0.34)0.5P are 1.02 and 1.05 eV, respectively. Extremely low dark currents of 70 and 620 pA were obtained for these MSM-PDs when they were operated at a reverse bias of -10 V at room temperature and at 70°C, respectively.
AB - To improve the Schottky contact performance and carrier confinement of GaAs metal-semiconductor-metal photodetectors (MSM-PDs), we employed the wide bandgap material, In0.5(Al0.66Ga0.34)0.5P, for the capping and buffer layers. We directly evaluated the Schottky contact parameters on the MSM-PD structure. The reverse characteristics of the Schottky contacts were examined by taking into account the Schottky barrier height depended on the electric field in the depletion region, and hence on the applied bias. The ideality factor and Schottky barrier height of Ti-Pt-Au contacts to In0.5(Al0.66Ga0.34)0.5P are 1.02 and 1.05 eV, respectively. Extremely low dark currents of 70 and 620 pA were obtained for these MSM-PDs when they were operated at a reverse bias of -10 V at room temperature and at 70°C, respectively.
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U2 - 10.1109/LED.2003.815427
DO - 10.1109/LED.2003.815427
M3 - Letter
AN - SCOPUS:0141675946
VL - 24
SP - 532
EP - 534
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 9
ER -