Metal-semiconductor-metal photodetectors with in AlGaP capping and buffer layers

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Abstract

To improve the Schottky contact performance and carrier confinement of GaAs metal-semiconductor-metal photodetectors (MSM-PDs), we employed the wide bandgap material, In0.5(Al0.66Ga0.34)0.5P, for the capping and buffer layers. We directly evaluated the Schottky contact parameters on the MSM-PD structure. The reverse characteristics of the Schottky contacts were examined by taking into account the Schottky barrier height depended on the electric field in the depletion region, and hence on the applied bias. The ideality factor and Schottky barrier height of Ti-Pt-Au contacts to In0.5(Al0.66Ga0.34)0.5P are 1.02 and 1.05 eV, respectively. Extremely low dark currents of 70 and 620 pA were obtained for these MSM-PDs when they were operated at a reverse bias of -10 V at room temperature and at 70°C, respectively.

Original languageEnglish
Pages (from-to)532-534
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number9
DOIs
Publication statusPublished - 2003 Sep 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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