Metal silicide nanowires

  • L. J. Chen
  • , W. W. Wu
  • , H. C. Hsu
  • , S. Y. Chen
  • , Y. L. Chueh
  • , L. J. Chou
  • , K. C. Lu
  • , K. N. Tu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Recent progresses on the growth and characterization of metal silicide nanowires are highlighted. Four examples are given: 1. point contact reactions between Ni and Si nanowires and reactive epitaxial growth of axial nano NiSi/Si, 2. growth of high-density titanium silicide nanowires in a single direction on a silicon surface, 3. synthesis and characterization of metallic TaSi 2 nanowires and 4. self-assembled growth of NiSi2 and α-FeSi2 nanowires by nitride mediated epitaxy.

Original languageEnglish
Title of host publicationECS Transactions - Nanoscale One-Dimensional Electronic and Photonic Devices, NODEPD
PublisherElectrochemical Society Inc.
Pages3-6
Number of pages4
Edition8
ISBN (Electronic)9781566775748
ISBN (Print)9781604238938
DOIs
Publication statusPublished - 2007
Event1st Nanoscale One-Dimensional Electronic and Photonic Devices, NODEPD - 212th ECS Meeting - Washington, DC, United States
Duration: 2007 Oct 72007 Oct 12

Publication series

NameECS Transactions
Number8
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other1st Nanoscale One-Dimensional Electronic and Photonic Devices, NODEPD - 212th ECS Meeting
Country/TerritoryUnited States
CityWashington, DC
Period07-10-0707-10-12

All Science Journal Classification (ASJC) codes

  • General Engineering

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