Metallurgical mechanism and optical properties of CuSnZnSSe powders using a 2-step sintering process

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Abstract

Cu2SnZn(S + Se)4 is an excellent absorber material for solar cells. This study obtained Cu2SnZn(S + Se)4 powders through solid state reaction by the ball milling and sintering processes from elemental Cu, Zn, Sn, S, and Se without using either polluting chemicals or expensive vacuum facilities. Ratios of S/S + Se in CuSnZnSSe were controlled from 0 to 1. The results showed that the 2-step sintering process (400°C for 12 hrs and then 700°C for 1 hr) was able to stabilize the composition and structure of the CuSnZnSSe powders. The crystallized intensity of the CuSnZnS matrix decreased with increasing the Se content. Raising the Se content restrained the SnS phase and reduced the resistance of the absorber layer. In addition, Raman data confirmed that Se caused a Raman shift in the CuSnZnSSe matrix and enhanced the optical properties of the CuSnZnSSe powders. For the interface of CuSnZnSSe film and Mo substrate, Mo could diffuse into CuSnZnSSe matrix after 200°C annealing. The interface thermal diffusion of CuSnZnSSe/ZnS improved the effects of stack to enhance the stability of structure.

Original languageEnglish
Article number101958
JournalJournal of Nanomaterials
Volume2014
DOIs
Publication statusPublished - 2014

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Powders
Sintering
Optical properties
Thermal diffusion
Ball milling
Solid state reactions
Solar cells
Vacuum
Annealing
Substrates
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

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title = "Metallurgical mechanism and optical properties of CuSnZnSSe powders using a 2-step sintering process",
abstract = "Cu2SnZn(S + Se)4 is an excellent absorber material for solar cells. This study obtained Cu2SnZn(S + Se)4 powders through solid state reaction by the ball milling and sintering processes from elemental Cu, Zn, Sn, S, and Se without using either polluting chemicals or expensive vacuum facilities. Ratios of S/S + Se in CuSnZnSSe were controlled from 0 to 1. The results showed that the 2-step sintering process (400°C for 12 hrs and then 700°C for 1 hr) was able to stabilize the composition and structure of the CuSnZnSSe powders. The crystallized intensity of the CuSnZnS matrix decreased with increasing the Se content. Raising the Se content restrained the SnS phase and reduced the resistance of the absorber layer. In addition, Raman data confirmed that Se caused a Raman shift in the CuSnZnSSe matrix and enhanced the optical properties of the CuSnZnSSe powders. For the interface of CuSnZnSSe film and Mo substrate, Mo could diffuse into CuSnZnSSe matrix after 200°C annealing. The interface thermal diffusion of CuSnZnSSe/ZnS improved the effects of stack to enhance the stability of structure.",
author = "Liu, {Tai Hsiang} and Hung, {Fei Yi} and Lui, {Truan Sheng} and Chen, {Kuan Jen}",
year = "2014",
doi = "10.1155/2014/101958",
language = "English",
volume = "2014",
journal = "Journal of Nanomaterials",
issn = "1687-4110",
publisher = "Hindawi Publishing Corporation",

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T1 - Metallurgical mechanism and optical properties of CuSnZnSSe powders using a 2-step sintering process

AU - Liu, Tai Hsiang

AU - Hung, Fei Yi

AU - Lui, Truan Sheng

AU - Chen, Kuan Jen

PY - 2014

Y1 - 2014

N2 - Cu2SnZn(S + Se)4 is an excellent absorber material for solar cells. This study obtained Cu2SnZn(S + Se)4 powders through solid state reaction by the ball milling and sintering processes from elemental Cu, Zn, Sn, S, and Se without using either polluting chemicals or expensive vacuum facilities. Ratios of S/S + Se in CuSnZnSSe were controlled from 0 to 1. The results showed that the 2-step sintering process (400°C for 12 hrs and then 700°C for 1 hr) was able to stabilize the composition and structure of the CuSnZnSSe powders. The crystallized intensity of the CuSnZnS matrix decreased with increasing the Se content. Raising the Se content restrained the SnS phase and reduced the resistance of the absorber layer. In addition, Raman data confirmed that Se caused a Raman shift in the CuSnZnSSe matrix and enhanced the optical properties of the CuSnZnSSe powders. For the interface of CuSnZnSSe film and Mo substrate, Mo could diffuse into CuSnZnSSe matrix after 200°C annealing. The interface thermal diffusion of CuSnZnSSe/ZnS improved the effects of stack to enhance the stability of structure.

AB - Cu2SnZn(S + Se)4 is an excellent absorber material for solar cells. This study obtained Cu2SnZn(S + Se)4 powders through solid state reaction by the ball milling and sintering processes from elemental Cu, Zn, Sn, S, and Se without using either polluting chemicals or expensive vacuum facilities. Ratios of S/S + Se in CuSnZnSSe were controlled from 0 to 1. The results showed that the 2-step sintering process (400°C for 12 hrs and then 700°C for 1 hr) was able to stabilize the composition and structure of the CuSnZnSSe powders. The crystallized intensity of the CuSnZnS matrix decreased with increasing the Se content. Raising the Se content restrained the SnS phase and reduced the resistance of the absorber layer. In addition, Raman data confirmed that Se caused a Raman shift in the CuSnZnSSe matrix and enhanced the optical properties of the CuSnZnSSe powders. For the interface of CuSnZnSSe film and Mo substrate, Mo could diffuse into CuSnZnSSe matrix after 200°C annealing. The interface thermal diffusion of CuSnZnSSe/ZnS improved the effects of stack to enhance the stability of structure.

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