The Ge concentration play an importion role in SiGe channel Fin-FET device. A fast, more convenient, and nondestructive analysis method, three-dimensional spectroscopic ellipsometry-optical critical dimension metrology (3D SE-OCD), is used to extract Ge concentrations of SiGe channel FinFETs. The refractive index (n) and extinction index (k) of SiGe with different Ge concentrations investigated under wavelengths λn = 370 nm and λk = 525 nm. Results show the Ge concentration of SiGe channel can be accurately measured using a 3D SE-OCD.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering