Method for extracting Ge concentration of SiGe channel FinFET device using three-dimensional spectroscopic ellipsometry-optical critical dimension metrology

Chien Hung Chen, Ying Chien Fang, Chung Hao Chiang, Sheng-Yuan Chu

Research output: Contribution to journalArticle

Abstract

The Ge concentration play an importion role in SiGe channel Fin-FET device. A fast, more convenient, and nondestructive analysis method, three-dimensional spectroscopic ellipsometry-optical critical dimension metrology (3D SE-OCD), is used to extract Ge concentrations of SiGe channel FinFETs. The refractive index (n) and extinction index (k) of SiGe with different Ge concentrations investigated under wavelengths λn = 370 nm and λk = 525 nm. Results show the Ge concentration of SiGe channel can be accurately measured using a 3D SE-OCD.

Original languageEnglish
JournalECS Solid State Letters
Volume3
Issue number9
DOIs
Publication statusPublished - 2014 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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