The present invention relates a method for high aspect ratio pattern transfer, by using combination of imprint and Step and Flash techniques to transfer high aspect ratio pattern. The present invention simultaneously saves the developing time and the amount of developer used during the photo-resist pattern transfer process. The present invention is able to avoid separation and dissolution between pattern and substrate that is attacked by developer, and is able to yield high aspect ratio patterns.
|Translated title of the contribution||高深寬比圖案轉移製作方法|
|Publication status||Published - 2005 Feb 3|