TY - GEN
T1 - Methods of improving accuracy in ingan mqws quantitative analysis by STEM/EDS
AU - Bow, Jong Shing
AU - Lai, Wei Chis
N1 - Publisher Copyright:
Copyright © 2020 ASM International® All rights reserved.
PY - 2020
Y1 - 2020
N2 - The composition of InGaN/AlN/GaN MQWs nano structure is anlayzed by STEM/EDS. The concentration of nitrogen in GaN materials is usually lower than that of gallium for specimen thickness larger than 50 nm due to low penetration ability of N K X-rays (0.392 KeV). The concentration of indium in the InGaN quanturm wells obtained by STEM/EDS analysis is always much lower its real value. This concentration dilution in this 3 nm structure results from the effect of electron beam broadening, and can be improved to a certain level by reducing specimen thickness, C2 aperture, and dwell time, with a sacrifice in signal intensity.
AB - The composition of InGaN/AlN/GaN MQWs nano structure is anlayzed by STEM/EDS. The concentration of nitrogen in GaN materials is usually lower than that of gallium for specimen thickness larger than 50 nm due to low penetration ability of N K X-rays (0.392 KeV). The concentration of indium in the InGaN quanturm wells obtained by STEM/EDS analysis is always much lower its real value. This concentration dilution in this 3 nm structure results from the effect of electron beam broadening, and can be improved to a certain level by reducing specimen thickness, C2 aperture, and dwell time, with a sacrifice in signal intensity.
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U2 - 10.31399/asm.cp.istfa2020p0285
DO - 10.31399/asm.cp.istfa2020p0285
M3 - Conference contribution
AN - SCOPUS:85104455258
T3 - Conference Proceedings from the International Symposium for Testing and Failure Analysis
SP - 285
EP - 289
BT - ISTFA 2020 - Papers Accecpted for the Planned 46th International Symposium for Testing and Failure Analysis
PB - ASM International
T2 - 46th International Symposium for Testing and Failure Analysis, ISTFA 2020
Y2 - 15 November 2020 through 19 November 2020
ER -