Methylamine growth of SiCN films using ECR-CVD

C. Y. Wen, J. J. Wu, H. J. Lo, L. C. Chen, K. H. Chen, S. T. Lin, Y. C. Yu, C. W. Wang, E. K. Lin

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


Continuous polycrystalline SiCN films with high nucleation density have been successfully deposited by using CH3NH2 as carbon source gas in an ECR-CVD reactor. From the kinetic point of view, using CH3NH2 as carbon source could provide more abundant active carbon species in the gas phase to enhance the carbon incorporation in the SiCN films. The compositions of the SiCN films analyzed from Rutherford Backscattering Spectroscopy showed that higher [CH3NH2]/[SiH4] ratio led to higher carbon content in the films. Moreover, a lower carbon content was measured when the film was deposited at higher substrate temperature. The direct band gap of the aforementioned SiCN films determined using PzR is around 4.4 eV, indicating a wide band gap material for blue-UV optoelectronics.

Original languageEnglish
Pages (from-to)115-120
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2000
EventChemical Processing of Dielectrics, Insulators and Electronic Ceramics - Boston, MA, USA
Duration: 1999 Nov 291999 Dec 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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