Mg doping concentration influenced by the polarity of the GaN layer in InGaN/GaN superlattice structures

Yen Lin Lai, Regime Chen, Chuan Pu Liu, Yo Way Lin

Research output: Contribution to conferencePaper

Abstract

The polarity of InGaN/GaN supeilattice structures grown on c-plane sapphires by metal-organic chemical vapor deposition (MOCVD) comprised of an GaN buffer layer doped with different impurities is studied. Photoluminescence (PL) was employed to determined the emitting characteristics of the samples. Secondary ion mass spectroscopy was used to examine the concentration of the constituents along the growth direction. Convergent beam electron diffraction (CBED) was used to determine the symmetry of the crystal. In addition, the polarity of the samples was also demonstrated by a simpler method of chemical etching in a KOH aqueous solution compared with the analysis of the CBED pattern. Our central results show that the variety of dopants in the GaN buffer layer would determine the polarity of the top GaN layer, which then influence the emitting performance of the InGaN/GaN superlattices.

Original languageEnglish
Pages174-178
Number of pages5
Publication statusPublished - 2003 Jan 1
EventState-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium - Orlando,FL, United States
Duration: 2003 Oct 122003 Oct 17

Other

OtherState-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium
CountryUnited States
CityOrlando,FL
Period03-10-1203-10-17

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All Science Journal Classification (ASJC) codes

  • Electrochemistry

Cite this

Lai, Y. L., Chen, R., Liu, C. P., & Lin, Y. W. (2003). Mg doping concentration influenced by the polarity of the GaN layer in InGaN/GaN superlattice structures. 174-178. Paper presented at State-of-the-Art Program on Compound Semiconductors XXXIX and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics IV - Proceedings of the Intenational Symposium, Orlando,FL, United States.