Mg doping concentration influenced by the polarity of the GaN layer in InGaN/GaN superlattice structures

Engineering & Materials Science

• Buffer layers 100%
• Electron diffraction 92%
• Doping (additives) 78%
• Superlattices 65%
• Crystal symmetry 62%
• Photoluminescence 56%
• Organic chemicals 54%
• Diffraction patterns 49%
• Sapphire 46%
• Chemical vapor deposition 40%
• Spectroscopy 39%
• Etching 37%
• Crystals 34%
• Impurities 33%
• Ions 32%
• Metals 22%

Chemical Compounds

• Convergent Beam Electron Diffraction 78%
• Superlattice 72%
• Polarity 57%
• Buffer Solution 30%
• Secondary Ion Mass Spectroscopy 25%
• Etching 21%
• Doping Material 20%
• Photoluminescence 17%
• Aqueous Solution 12%