Mg-induced increase of band gap in Zn1-xMgxO nanorods revealed by x-ray absorption and emission spectroscopy

J. W. Chiou, H. M. Tsai, C. W. Pao, F. Z. Chien, W. F. Pong, C. W. Chen, M. H. Tsai, J. J. Wu, C. H. Ko, H. H. Chiang, H. J. Lin, J. F. Lee, J. H. Guo

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29 Citations (Scopus)

Abstract

X-ray absorption near-edge structure (XANES) and x-ray emission spectroscopy (XES) measurements were used to investigate the effect of Mg doping in ZnO nanorods. The intensities of the features in the O K -edge XANES spectra of Zn1-xMgxO nanorods are lower than those of pure ZnO nanorods, suggesting that Mg doping increases the negative effective charge of O ions. XES and XANES spectra of O 2p states indicate that Mg doping raises (lowers) the conduction-band-minimum (valence-band-maximum) and increases the band gap. The band gap is found to increase linearly with the Mg content, as revealed by photoluminescence and combined XANES and XES measurements.

Original languageEnglish
Article number013709
JournalJournal of Applied Physics
Volume104
Issue number1
DOIs
Publication statusPublished - 2008

All Science Journal Classification (ASJC) codes

  • General Physics and Astronomy

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