Micromachined Multilevel Silicon Structure by Anisotropie Wet Etching

Chen Kuei Chung, Chien Chih Lee

Research output: Contribution to journalArticlepeer-review


A method for multislevel silicon terraced structure especially with corner compensation to get square corner has been demonstrated. The conventional designs of corner compensation presented with different geometrical layout are for two-level terraced structures. Our mask layout with the grid buffer region is good for square corner formation of multislevel Si(100) terraced structure during KOH anisotropic etching. The grid buffer regions play an important role not only in compromising the etching rate of convex corners at different levels to obtain good square corners, but also in high space efficiency.

Original languageEnglish
Pages (from-to)411-414
Number of pages4
JournalInternational Journal of Nonlinear Sciences and Numerical Simulation
Issue number3-4
Publication statusPublished - 2002 Jan 1

All Science Journal Classification (ASJC) codes

  • Statistical and Nonlinear Physics
  • Computational Mechanics
  • Modelling and Simulation
  • Engineering (miscellaneous)
  • Mechanics of Materials
  • Physics and Astronomy(all)
  • Applied Mathematics

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