Microscopic study of random dopant fluctuation in silicon nanowire transistors using 3D simulation

Chun Yu Chen; Jyi Tsong Lin; Meng Hsueh Chiang

doi:10.1109/INEC.2013.6466019

Microscopic study of random dopant fluctuation in silicon nanowire transistors using 3D simulation

Chun Yu Chen, Jyi Tsong Lin, Meng Hsueh Chiang

Doctoral Degree Program on Nano-Integrated-Circuit Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Variability impact of random dopant fluctuation in nanometer-scale silicon nanowire MOSFET is assessed via TCAD numerical simulations. We have simulated ensembles of 629 devices, which differ from each other due to the physical manifestation of the dopant variability in the channel location, including the detailed microscopic pattern of a discrete sphere dopant from drain to source. Based on our study, the variations of leakage and drive currents are not great, but not negligible. Implications from random dopant fluctuation for design are also discussed.

Original language	English
Title of host publication	Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Pages	267-270
Number of pages	4
DOIs	https://doi.org/10.1109/INEC.2013.6466019
Publication status	Published - 2013
Event	2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 - Singapore, Singapore Duration: 2013 Jan 2 → 2013 Jan 4

Publication series

Name	Proceedings - Winter Simulation Conference
ISSN (Print)	0891-7736

Other

Other	2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Country/Territory	Singapore
City	Singapore
Period	13-01-02 → 13-01-04

All Science Journal Classification (ASJC) codes

Software
Modelling and Simulation
Computer Science Applications

Access to Document

10.1109/INEC.2013.6466019

Cite this

@inproceedings{fb5c655edd204d3883d92cf656321eec,

title = "Microscopic study of random dopant fluctuation in silicon nanowire transistors using 3D simulation",

abstract = "Variability impact of random dopant fluctuation in nanometer-scale silicon nanowire MOSFET is assessed via TCAD numerical simulations. We have simulated ensembles of 629 devices, which differ from each other due to the physical manifestation of the dopant variability in the channel location, including the detailed microscopic pattern of a discrete sphere dopant from drain to source. Based on our study, the variations of leakage and drive currents are not great, but not negligible. Implications from random dopant fluctuation for design are also discussed.",

author = "Chen, {Chun Yu} and Lin, {Jyi Tsong} and Chiang, {Meng Hsueh}",

year = "2013",

doi = "10.1109/INEC.2013.6466019",

language = "English",

isbn = "9781467348416",

series = "Proceedings - Winter Simulation Conference",

pages = "267--270",

booktitle = "Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013",

note = "2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 ; Conference date: 02-01-2013 Through 04-01-2013",

}

Chen, CY, Lin, JT & Chiang, MH 2013, Microscopic study of random dopant fluctuation in silicon nanowire transistors using 3D simulation. in Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013., 6466019, Proceedings - Winter Simulation Conference, pp. 267-270, 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013, Singapore, Singapore, 13-01-02. https://doi.org/10.1109/INEC.2013.6466019

Microscopic study of random dopant fluctuation in silicon nanowire transistors using 3D simulation. / Chen, Chun Yu; Lin, Jyi Tsong; Chiang, Meng Hsueh.
Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013. 2013. p. 267-270 6466019 (Proceedings - Winter Simulation Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Microscopic study of random dopant fluctuation in silicon nanowire transistors using 3D simulation

AU - Chen, Chun Yu

AU - Lin, Jyi Tsong

AU - Chiang, Meng Hsueh

PY - 2013

Y1 - 2013

N2 - Variability impact of random dopant fluctuation in nanometer-scale silicon nanowire MOSFET is assessed via TCAD numerical simulations. We have simulated ensembles of 629 devices, which differ from each other due to the physical manifestation of the dopant variability in the channel location, including the detailed microscopic pattern of a discrete sphere dopant from drain to source. Based on our study, the variations of leakage and drive currents are not great, but not negligible. Implications from random dopant fluctuation for design are also discussed.

AB - Variability impact of random dopant fluctuation in nanometer-scale silicon nanowire MOSFET is assessed via TCAD numerical simulations. We have simulated ensembles of 629 devices, which differ from each other due to the physical manifestation of the dopant variability in the channel location, including the detailed microscopic pattern of a discrete sphere dopant from drain to source. Based on our study, the variations of leakage and drive currents are not great, but not negligible. Implications from random dopant fluctuation for design are also discussed.

UR - http://www.scopus.com/inward/record.url?scp=84874780072&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84874780072&partnerID=8YFLogxK

U2 - 10.1109/INEC.2013.6466019

DO - 10.1109/INEC.2013.6466019

M3 - Conference contribution

AN - SCOPUS:84874780072

SN - 9781467348416

T3 - Proceedings - Winter Simulation Conference

SP - 267

EP - 270

BT - Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013

T2 - 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013

Y2 - 2 January 2013 through 4 January 2013

ER -

Microscopic study of random dopant fluctuation in silicon nanowire transistors using 3D simulation

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