Microscopic study of random dopant fluctuation in silicon nanowire transistors using 3D simulation

Chun Yu Chen, Jyi Tsong Lin, Meng-Hsueh Chiang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Variability impact of random dopant fluctuation in nanometer-scale silicon nanowire MOSFET is assessed via TCAD numerical simulations. We have simulated ensembles of 629 devices, which differ from each other due to the physical manifestation of the dopant variability in the channel location, including the detailed microscopic pattern of a discrete sphere dopant from drain to source. Based on our study, the variations of leakage and drive currents are not great, but not negligible. Implications from random dopant fluctuation for design are also discussed.

Original languageEnglish
Title of host publicationProceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Pages267-270
Number of pages4
DOIs
Publication statusPublished - 2013 Mar 13
Event2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 - Singapore, Singapore
Duration: 2013 Jan 22013 Jan 4

Publication series

NameProceedings - Winter Simulation Conference
ISSN (Print)0891-7736

Other

Other2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
CountrySingapore
CitySingapore
Period13-01-0213-01-04

All Science Journal Classification (ASJC) codes

  • Software
  • Modelling and Simulation
  • Computer Science Applications

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