Microstructural characteristics of InGaZnO thin film using an electrical current method

Yen Ting Chen; Fei Yi Hung; Shoou Jinn Chang; Truan Sheng Lui; Li Hui Chen

doi:10.2320/matertrans.M2011312

Microstructural characteristics of InGaZnO thin film using an electrical current method

Yen Ting Chen, Fei Yi Hung, Shoou Jinn Chang, Truan Sheng Lui, Li Hui Chen

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

This research studied the microstructural characteristics and electronic properties of IGZO1114 films (atomic ratio In : Ga : Zn : O = 1 : 1 : 1 : 4) with different annealing conditions. The solid-state electrical current method was used in the IGZO/In films (In layer was a channel) and the interface effect on the electrical current mechanism was discussed. The experimental results show the effect of the annealing temperature was larger than that of the deposition oxygen flow rate for the film resistances. IGZO film which was annealed at 575K was able to stabilize the composition of the matrix. The electrical current experiment at room temperature confirmed that the diffusion of the IGZO/In film occurred through an electric current induced crystallization (EIC). The In layer not only assisted the recrystallization behavior of the IGZO film, but also improved the electrical resistance.

Original language	English
Pages (from-to)	733-738
Number of pages	6
Journal	Materials Transactions
Volume	53
Issue number	4
DOIs	https://doi.org/10.2320/matertrans.M2011312
Publication status	Published - 2012

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.2320/matertrans.M2011312

Cite this

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title = "Microstructural characteristics of InGaZnO thin film using an electrical current method",

abstract = "This research studied the microstructural characteristics and electronic properties of IGZO1114 films (atomic ratio In : Ga : Zn : O = 1 : 1 : 1 : 4) with different annealing conditions. The solid-state electrical current method was used in the IGZO/In films (In layer was a channel) and the interface effect on the electrical current mechanism was discussed. The experimental results show the effect of the annealing temperature was larger than that of the deposition oxygen flow rate for the film resistances. IGZO film which was annealed at 575K was able to stabilize the composition of the matrix. The electrical current experiment at room temperature confirmed that the diffusion of the IGZO/In film occurred through an electric current induced crystallization (EIC). The In layer not only assisted the recrystallization behavior of the IGZO film, but also improved the electrical resistance.",

author = "Chen, {Yen Ting} and Hung, {Fei Yi} and Chang, {Shoou Jinn} and Lui, {Truan Sheng} and Chen, {Li Hui}",

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language = "English",

volume = "53",

pages = "733--738",

journal = "Materials Transactions",

issn = "1345-9678",

publisher = "Japan Institute of Metals (JIM)",

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T1 - Microstructural characteristics of InGaZnO thin film using an electrical current method

AU - Chen, Yen Ting

AU - Hung, Fei Yi

AU - Chang, Shoou Jinn

AU - Lui, Truan Sheng

AU - Chen, Li Hui

PY - 2012

Y1 - 2012

N2 - This research studied the microstructural characteristics and electronic properties of IGZO1114 films (atomic ratio In : Ga : Zn : O = 1 : 1 : 1 : 4) with different annealing conditions. The solid-state electrical current method was used in the IGZO/In films (In layer was a channel) and the interface effect on the electrical current mechanism was discussed. The experimental results show the effect of the annealing temperature was larger than that of the deposition oxygen flow rate for the film resistances. IGZO film which was annealed at 575K was able to stabilize the composition of the matrix. The electrical current experiment at room temperature confirmed that the diffusion of the IGZO/In film occurred through an electric current induced crystallization (EIC). The In layer not only assisted the recrystallization behavior of the IGZO film, but also improved the electrical resistance.

AB - This research studied the microstructural characteristics and electronic properties of IGZO1114 films (atomic ratio In : Ga : Zn : O = 1 : 1 : 1 : 4) with different annealing conditions. The solid-state electrical current method was used in the IGZO/In films (In layer was a channel) and the interface effect on the electrical current mechanism was discussed. The experimental results show the effect of the annealing temperature was larger than that of the deposition oxygen flow rate for the film resistances. IGZO film which was annealed at 575K was able to stabilize the composition of the matrix. The electrical current experiment at room temperature confirmed that the diffusion of the IGZO/In film occurred through an electric current induced crystallization (EIC). The In layer not only assisted the recrystallization behavior of the IGZO film, but also improved the electrical resistance.

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Microstructural characteristics of InGaZnO thin film using an electrical current method

Abstract

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