Microstructural study of SnO2 thin layers deposited on sapphire by sol-gel dip-coating

W. Hamd, Y. C. Wu, A. Boulle, E. Thune, R. Guinebretière

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20 Citations (Scopus)

Abstract

Tin oxide (SnO2) films have been grown onto (006) sapphire substrates by sol-gel dip-coating using tin alkoxide solutions. It is shown, using grazing-incidence X-ray diffraction, reciprocal space mapping and atomic force microscopy, that thermal annealing at 500 °C induces the crystallization of SnO2 in the rutile-type phase. Further annealing treatments at temperatures lower than 1100 °C give rise to slow grain growth controlled by surface diffusion, whereas rapid grain growth (controlled by an evaporation-condensation mechanism) takes place at temperatures higher than 1100 °C. Concomitantly, the film splits into isolated islands and a fibre texture occurs at higher temperatures.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalThin Solid Films
Volume518
Issue number1
DOIs
Publication statusPublished - 2009 Nov 2

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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