Microstructure and optical properties of Ge(Si) dots grown on Si

J. Wan; S. Tong; Z. M. Jiang; G. Jin; Y. H. Luo; J. L. Liu; X. Z. Liao; J. Zou; Kang L. Wang

doi:10.1117/12.460805

Microstructure and optical properties of Ge(Si) dots grown on Si

J. Wan, S. Tong, Z. M. Jiang, G. Jin, Y. H. Luo, J. L. Liu, X. Z. Liao, J. Zou, Kang L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

Abstract

The microstructural, luminescence properties and photoresponse of multi-layer Ge(Si) quantum dots grown on Si (100) substrates are studied. The strain and composition of the dots are studied by synchrotron-radiation x-ray. The dots are found to be Si_0.58Ge_0.42 alloy with 50% strain relaxed in average. The photoluminescence from the dots is observed up to room temperature. The thermal stability of the quantum dots is studied. P-i-n structures are grown with Ge(Si) dots embedded in the i-layer for photodetection investigation. The photoresponse wavelength of Ge(Si) dots covers the wavelength range of 1.3-1.52 μm and relatively high external quantum efficiency is obtained.

Original language	English
Pages (from-to)	89-94
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4656
DOIs	https://doi.org/10.1117/12.460805
Publication status	Published - 2002

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.460805

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title = "Microstructure and optical properties of Ge(Si) dots grown on Si",

abstract = "The microstructural, luminescence properties and photoresponse of multi-layer Ge(Si) quantum dots grown on Si (100) substrates are studied. The strain and composition of the dots are studied by synchrotron-radiation x-ray. The dots are found to be Si0.58Ge0.42 alloy with 50% strain relaxed in average. The photoluminescence from the dots is observed up to room temperature. The thermal stability of the quantum dots is studied. P-i-n structures are grown with Ge(Si) dots embedded in the i-layer for photodetection investigation. The photoresponse wavelength of Ge(Si) dots covers the wavelength range of 1.3-1.52 μm and relatively high external quantum efficiency is obtained.",

author = "J. Wan and S. Tong and Jiang, {Z. M.} and G. Jin and Luo, {Y. H.} and Liu, {J. L.} and Liao, {X. Z.} and J. Zou and Wang, {Kang L.}",

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pages = "89--94",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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TY - JOUR

T1 - Microstructure and optical properties of Ge(Si) dots grown on Si

AU - Wan, J.

AU - Tong, S.

AU - Jiang, Z. M.

AU - Jin, G.

AU - Luo, Y. H.

AU - Liu, J. L.

AU - Liao, X. Z.

AU - Zou, J.

AU - Wang, Kang L.

PY - 2002

Y1 - 2002

N2 - The microstructural, luminescence properties and photoresponse of multi-layer Ge(Si) quantum dots grown on Si (100) substrates are studied. The strain and composition of the dots are studied by synchrotron-radiation x-ray. The dots are found to be Si0.58Ge0.42 alloy with 50% strain relaxed in average. The photoluminescence from the dots is observed up to room temperature. The thermal stability of the quantum dots is studied. P-i-n structures are grown with Ge(Si) dots embedded in the i-layer for photodetection investigation. The photoresponse wavelength of Ge(Si) dots covers the wavelength range of 1.3-1.52 μm and relatively high external quantum efficiency is obtained.

AB - The microstructural, luminescence properties and photoresponse of multi-layer Ge(Si) quantum dots grown on Si (100) substrates are studied. The strain and composition of the dots are studied by synchrotron-radiation x-ray. The dots are found to be Si0.58Ge0.42 alloy with 50% strain relaxed in average. The photoluminescence from the dots is observed up to room temperature. The thermal stability of the quantum dots is studied. P-i-n structures are grown with Ge(Si) dots embedded in the i-layer for photodetection investigation. The photoresponse wavelength of Ge(Si) dots covers the wavelength range of 1.3-1.52 μm and relatively high external quantum efficiency is obtained.

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JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

ER -

Microstructure and optical properties of Ge(Si) dots grown on Si

Abstract

All Science Journal Classification (ASJC) codes

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