Microstructure and piezoelectric properties of c-axis ScAlN films on the Y-128° LiNbO3 substrate

Pin Hung Chen, Sean Wu, Yi-Chun Chen, Jow-Lay Huang, Ding Fwu Lii, Zhi Xun Lin

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Highly c-axis preferred orientation ScAlN films were deposited on Y-128° lithium niobate using the co-sputtering technique. The substitution of Sc atoms at Al positions causes a lattice distortion and induces a large piezoelectric response. X-ray diffraction patterns indicated that most of the films showed (002) peaks and the best crystallinity appeared at the Sc content of 9.0 at%. The cross-section of TEM results showed that the higher c-axis orientation columnar structure formed as the film thickness increased, and the structure transforms from wurtzite to cubical structure from the nano-beam diffraction analysis. Then the piezoelectric coefficient would be enhanced obviously at the Sc content of 18.1 at% and the value is nearly two times larger than pure AlN. After rapid thermal annealing treatment, the crystal quality could be improved and the highest value of piezoelectric coefficient was achieved at 18.26 pC/N.

Original languageEnglish
Pages (from-to)129-132
Number of pages4
JournalSurface and Coatings Technology
Volume284
DOIs
Publication statusPublished - 2015 Dec 25

Fingerprint

microstructure
Microstructure
Rapid thermal annealing
Substrates
coefficients
lithium niobates
wurtzite
Diffraction patterns
Sputtering
Film thickness
crystallinity
Lithium
Substitution reactions
film thickness
diffraction patterns
Diffraction
sputtering
substitutes
Transmission electron microscopy
X ray diffraction

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

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title = "Microstructure and piezoelectric properties of c-axis ScAlN films on the Y-128° LiNbO3 substrate",
abstract = "Highly c-axis preferred orientation ScAlN films were deposited on Y-128° lithium niobate using the co-sputtering technique. The substitution of Sc atoms at Al positions causes a lattice distortion and induces a large piezoelectric response. X-ray diffraction patterns indicated that most of the films showed (002) peaks and the best crystallinity appeared at the Sc content of 9.0 at{\%}. The cross-section of TEM results showed that the higher c-axis orientation columnar structure formed as the film thickness increased, and the structure transforms from wurtzite to cubical structure from the nano-beam diffraction analysis. Then the piezoelectric coefficient would be enhanced obviously at the Sc content of 18.1 at{\%} and the value is nearly two times larger than pure AlN. After rapid thermal annealing treatment, the crystal quality could be improved and the highest value of piezoelectric coefficient was achieved at 18.26 pC/N.",
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Microstructure and piezoelectric properties of c-axis ScAlN films on the Y-128° LiNbO3 substrate. / Chen, Pin Hung; Wu, Sean; Chen, Yi-Chun; Huang, Jow-Lay; Lii, Ding Fwu; Lin, Zhi Xun.

In: Surface and Coatings Technology, Vol. 284, 25.12.2015, p. 129-132.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Microstructure and piezoelectric properties of c-axis ScAlN films on the Y-128° LiNbO3 substrate

AU - Chen, Pin Hung

AU - Wu, Sean

AU - Chen, Yi-Chun

AU - Huang, Jow-Lay

AU - Lii, Ding Fwu

AU - Lin, Zhi Xun

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AB - Highly c-axis preferred orientation ScAlN films were deposited on Y-128° lithium niobate using the co-sputtering technique. The substitution of Sc atoms at Al positions causes a lattice distortion and induces a large piezoelectric response. X-ray diffraction patterns indicated that most of the films showed (002) peaks and the best crystallinity appeared at the Sc content of 9.0 at%. The cross-section of TEM results showed that the higher c-axis orientation columnar structure formed as the film thickness increased, and the structure transforms from wurtzite to cubical structure from the nano-beam diffraction analysis. Then the piezoelectric coefficient would be enhanced obviously at the Sc content of 18.1 at% and the value is nearly two times larger than pure AlN. After rapid thermal annealing treatment, the crystal quality could be improved and the highest value of piezoelectric coefficient was achieved at 18.26 pC/N.

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