Microstructure and piezoelectric properties of hexagonal MgxZn1−xO/ZnO films at lower Mg compositions

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Abstract

We investigate the piezoelectric coefficient (d33) of MgxZn1−xO and MgxZn1−xO/ZnO films with the variation of the Mg concentration. The films are grown on Si (111) substrate using MgO and ZnO as targets by radio frequency magnetron sputtering. The thickness of all the films is fixed at around 500 nm for both MgxZn1−xO and MgxZn1−xO/ZnO films. All the films have high crystallinity with preferred orientation along c-axis and that shows columnar microstructures. Besides, the substitution of magnesium ions at zinc sites is confirmed by X-ray diffraction patterns, X-ray photoelectron spectroscopy and UV–Visible spectroscopy. The d33 values reach 41.7 pm/V and 47.5 pm/V for MgxZn1−xO and MgxZn1−xO/ZnO (x = 0.30) films which is around 3.4 and 3.8 times larger than pure ZnO films (12.4 pm/V). The films may be considered as promising candidate for piezoelectric nanogenerators and piezotronic transistors.

Original languageEnglish
Article number137459
JournalThin Solid Films
Volume690
DOIs
Publication statusPublished - 2019 Nov 30

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microstructure
Microstructure
Chemical analysis
Magnetron sputtering
Magnesium
Diffraction patterns
magnesium
Zinc
crystallinity
radio frequencies
magnetron sputtering
Transistors
x rays
Substitution reactions
transistors
diffraction patterns
X ray photoelectron spectroscopy
zinc
photoelectron spectroscopy
Spectroscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

@article{147292b2c4ff47d1865ea03f988f2201,
title = "Microstructure and piezoelectric properties of hexagonal MgxZn1−xO/ZnO films at lower Mg compositions",
abstract = "We investigate the piezoelectric coefficient (d33) of MgxZn1−xO and MgxZn1−xO/ZnO films with the variation of the Mg concentration. The films are grown on Si (111) substrate using MgO and ZnO as targets by radio frequency magnetron sputtering. The thickness of all the films is fixed at around 500 nm for both MgxZn1−xO and MgxZn1−xO/ZnO films. All the films have high crystallinity with preferred orientation along c-axis and that shows columnar microstructures. Besides, the substitution of magnesium ions at zinc sites is confirmed by X-ray diffraction patterns, X-ray photoelectron spectroscopy and UV–Visible spectroscopy. The d33 values reach 41.7 pm/V and 47.5 pm/V for MgxZn1−xO and MgxZn1−xO/ZnO (x = 0.30) films which is around 3.4 and 3.8 times larger than pure ZnO films (12.4 pm/V). The films may be considered as promising candidate for piezoelectric nanogenerators and piezotronic transistors.",
author = "Chen, {Hsin Hung} and Brahma Sanjaya and Chuan-Pu Liu and Jow-Lay Huang",
year = "2019",
month = "11",
day = "30",
doi = "10.1016/j.tsf.2019.137459",
language = "English",
volume = "690",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

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T1 - Microstructure and piezoelectric properties of hexagonal MgxZn1−xO/ZnO films at lower Mg compositions

AU - Chen, Hsin Hung

AU - Sanjaya, Brahma

AU - Liu, Chuan-Pu

AU - Huang, Jow-Lay

PY - 2019/11/30

Y1 - 2019/11/30

N2 - We investigate the piezoelectric coefficient (d33) of MgxZn1−xO and MgxZn1−xO/ZnO films with the variation of the Mg concentration. The films are grown on Si (111) substrate using MgO and ZnO as targets by radio frequency magnetron sputtering. The thickness of all the films is fixed at around 500 nm for both MgxZn1−xO and MgxZn1−xO/ZnO films. All the films have high crystallinity with preferred orientation along c-axis and that shows columnar microstructures. Besides, the substitution of magnesium ions at zinc sites is confirmed by X-ray diffraction patterns, X-ray photoelectron spectroscopy and UV–Visible spectroscopy. The d33 values reach 41.7 pm/V and 47.5 pm/V for MgxZn1−xO and MgxZn1−xO/ZnO (x = 0.30) films which is around 3.4 and 3.8 times larger than pure ZnO films (12.4 pm/V). The films may be considered as promising candidate for piezoelectric nanogenerators and piezotronic transistors.

AB - We investigate the piezoelectric coefficient (d33) of MgxZn1−xO and MgxZn1−xO/ZnO films with the variation of the Mg concentration. The films are grown on Si (111) substrate using MgO and ZnO as targets by radio frequency magnetron sputtering. The thickness of all the films is fixed at around 500 nm for both MgxZn1−xO and MgxZn1−xO/ZnO films. All the films have high crystallinity with preferred orientation along c-axis and that shows columnar microstructures. Besides, the substitution of magnesium ions at zinc sites is confirmed by X-ray diffraction patterns, X-ray photoelectron spectroscopy and UV–Visible spectroscopy. The d33 values reach 41.7 pm/V and 47.5 pm/V for MgxZn1−xO and MgxZn1−xO/ZnO (x = 0.30) films which is around 3.4 and 3.8 times larger than pure ZnO films (12.4 pm/V). The films may be considered as promising candidate for piezoelectric nanogenerators and piezotronic transistors.

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