TY - JOUR
T1 - Microstructure and piezoelectric properties of reactively sputtered highly C-axis ScxAl1-xN thin films on diamond-like carbon/Si substrate
AU - Liauh, Woan Jwu
AU - Wu, Sean
AU - Huang, Jow Lay
AU - Lii, Ding Fwu
AU - Lin, Zhi Xun
AU - Yeh, Wen Kuan
N1 - Funding Information:
This project was financially supported by the Ministry of Science and Technology of the ROC under contract No. MOST104-2221-E-006-032-MY3 and MOST104-2221-E-230-001 . The technical supports from National Nano Devices Laboratories (NDL, JDP105-Y1-023) of Taiwan, ROC.
Publisher Copyright:
© 2016 Elsevier B.V.
PY - 2016/12/25
Y1 - 2016/12/25
N2 - We report deposition of pure AlN and ScxAl1-xN thin films with different Sc concentration on DLC/Si substrate by RF and DC reactive magnetron co-sputtering method by using Al and Sc as targets. The X-ray diffraction (XRD) results showed that the films have high c-axis-orientation. Electron probe microanalyzer (EPMA) analysis reveals the presence of scandium atoms reduce the space occupied by aluminum atoms, leading to lattice distortion during the phase transition. The SEM cross-section results showed that the ScxAl1-xN films are highly aligned along c-axis and have columnar like morphology. The top view of SEM results indicated that the new phase formation above Sc 30.33%, however no new peak appeared in the XRD pattern. The piezoelectric coefficient (d33) of ScxAl1-xN thin films are measured and the highest value (11.54 pC/N) is achieved at x = 30.33% increasing 14 times, as that with AlN/DLC/Si, 0.73 pC/N. ScxAl1-xN films on DLC/Si substrate have a great potential to be applied on high frequency SAW devices in the future.
AB - We report deposition of pure AlN and ScxAl1-xN thin films with different Sc concentration on DLC/Si substrate by RF and DC reactive magnetron co-sputtering method by using Al and Sc as targets. The X-ray diffraction (XRD) results showed that the films have high c-axis-orientation. Electron probe microanalyzer (EPMA) analysis reveals the presence of scandium atoms reduce the space occupied by aluminum atoms, leading to lattice distortion during the phase transition. The SEM cross-section results showed that the ScxAl1-xN films are highly aligned along c-axis and have columnar like morphology. The top view of SEM results indicated that the new phase formation above Sc 30.33%, however no new peak appeared in the XRD pattern. The piezoelectric coefficient (d33) of ScxAl1-xN thin films are measured and the highest value (11.54 pC/N) is achieved at x = 30.33% increasing 14 times, as that with AlN/DLC/Si, 0.73 pC/N. ScxAl1-xN films on DLC/Si substrate have a great potential to be applied on high frequency SAW devices in the future.
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U2 - 10.1016/j.surfcoat.2016.06.097
DO - 10.1016/j.surfcoat.2016.06.097
M3 - Article
AN - SCOPUS:84994246612
SN - 0257-8972
VL - 308
SP - 101
EP - 107
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
ER -