Microstructure characterization of nonpolar ZnO and Zn 1-xMg xO epilayers grown on (100) γ-LiAlO 2 by chemical vapor deposition

T. H. Huang, W. H. Lin, J. J. Wu, M. M.C. Chou, T. Yan, L. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

The defects and optical properties of nonpolar (1010) ZnO and Zn 0.9Mg 0.1O epilayers grown on (100) γ-LiAlO 2 substrates by chemical vapor deposition were investigated by x-ray diffraction, transmission electron microscopy and cathodoluminescence. The x-ray rocking curves of the (1100) reflection for the ZnO and Zn 0.9Mg 0.1O epilayers possessed low FWHM values of 504 and 216 arcsec, respectively. Misfit dislocations in high density exhibited at the epilayer/substrate interface with b= 1/3 [1210] for both samples. Basal stacking faults, threading dislocations and inversion domains were observed in the ZnO epilayer with densities on the order of 10 -5 cm -2, 10 -9 cm -2 and 10 -4 cm -1, respectively. On the other hand, only basal stacking faults and threading dislocations were found in the Zn 0.9Mg 0.1O epilayers. The densities of these defects were at least one order of magnitude lower than those of the ZnO one. The Zn 0.9Mg 0.1O epilayers exhibited a near band-edge emission at 3.5 eV whose intensity is about 15 times stronger than that of the ZnO epilayer at 3.3 eV. Monochromatic cathodoluminescence images acquired at the peak energy revealed that the basal stacking faults showed low emission intensities.

Original languageEnglish
Title of host publicationWide-Bandgap Semiconductor Materials and Devices 13
Pages63-71
Number of pages9
Edition7
DOIs
Publication statusPublished - 2012 Nov 19
Event13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting - Seattle, WA, United States
Duration: 2012 May 62012 May 10

Publication series

NameECS Transactions
Number7
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting
CountryUnited States
CitySeattle, WA
Period12-05-0612-05-10

Fingerprint

Epilayers
Chemical vapor deposition
Microstructure
Stacking faults
Dislocations (crystals)
Cathodoluminescence
X rays
Defects
Substrates
Full width at half maximum
Optical properties
Diffraction
Transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Huang, T. H., Lin, W. H., Wu, J. J., Chou, M. M. C., Yan, T., & Chang, L. (2012). Microstructure characterization of nonpolar ZnO and Zn 1-xMg xO epilayers grown on (100) γ-LiAlO 2 by chemical vapor deposition. In Wide-Bandgap Semiconductor Materials and Devices 13 (7 ed., pp. 63-71). (ECS Transactions; Vol. 45, No. 7). https://doi.org/10.1149/1.3701526
Huang, T. H. ; Lin, W. H. ; Wu, J. J. ; Chou, M. M.C. ; Yan, T. ; Chang, L. / Microstructure characterization of nonpolar ZnO and Zn 1-xMg xO epilayers grown on (100) γ-LiAlO 2 by chemical vapor deposition. Wide-Bandgap Semiconductor Materials and Devices 13. 7. ed. 2012. pp. 63-71 (ECS Transactions; 7).
@inproceedings{1189003871df467c99d9dc031da69329,
title = "Microstructure characterization of nonpolar ZnO and Zn 1-xMg xO epilayers grown on (100) γ-LiAlO 2 by chemical vapor deposition",
abstract = "The defects and optical properties of nonpolar (1010) ZnO and Zn 0.9Mg 0.1O epilayers grown on (100) γ-LiAlO 2 substrates by chemical vapor deposition were investigated by x-ray diffraction, transmission electron microscopy and cathodoluminescence. The x-ray rocking curves of the (1100) reflection for the ZnO and Zn 0.9Mg 0.1O epilayers possessed low FWHM values of 504 and 216 arcsec, respectively. Misfit dislocations in high density exhibited at the epilayer/substrate interface with b= 1/3 [1210] for both samples. Basal stacking faults, threading dislocations and inversion domains were observed in the ZnO epilayer with densities on the order of 10 -5 cm -2, 10 -9 cm -2 and 10 -4 cm -1, respectively. On the other hand, only basal stacking faults and threading dislocations were found in the Zn 0.9Mg 0.1O epilayers. The densities of these defects were at least one order of magnitude lower than those of the ZnO one. The Zn 0.9Mg 0.1O epilayers exhibited a near band-edge emission at 3.5 eV whose intensity is about 15 times stronger than that of the ZnO epilayer at 3.3 eV. Monochromatic cathodoluminescence images acquired at the peak energy revealed that the basal stacking faults showed low emission intensities.",
author = "Huang, {T. H.} and Lin, {W. H.} and Wu, {J. J.} and Chou, {M. M.C.} and T. Yan and L. Chang",
year = "2012",
month = "11",
day = "19",
doi = "10.1149/1.3701526",
language = "English",
isbn = "9781566779593",
series = "ECS Transactions",
number = "7",
pages = "63--71",
booktitle = "Wide-Bandgap Semiconductor Materials and Devices 13",
edition = "7",

}

Huang, TH, Lin, WH, Wu, JJ, Chou, MMC, Yan, T & Chang, L 2012, Microstructure characterization of nonpolar ZnO and Zn 1-xMg xO epilayers grown on (100) γ-LiAlO 2 by chemical vapor deposition. in Wide-Bandgap Semiconductor Materials and Devices 13. 7 edn, ECS Transactions, no. 7, vol. 45, pp. 63-71, 13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting, Seattle, WA, United States, 12-05-06. https://doi.org/10.1149/1.3701526

Microstructure characterization of nonpolar ZnO and Zn 1-xMg xO epilayers grown on (100) γ-LiAlO 2 by chemical vapor deposition. / Huang, T. H.; Lin, W. H.; Wu, J. J.; Chou, M. M.C.; Yan, T.; Chang, L.

Wide-Bandgap Semiconductor Materials and Devices 13. 7. ed. 2012. p. 63-71 (ECS Transactions; Vol. 45, No. 7).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Microstructure characterization of nonpolar ZnO and Zn 1-xMg xO epilayers grown on (100) γ-LiAlO 2 by chemical vapor deposition

AU - Huang, T. H.

AU - Lin, W. H.

AU - Wu, J. J.

AU - Chou, M. M.C.

AU - Yan, T.

AU - Chang, L.

PY - 2012/11/19

Y1 - 2012/11/19

N2 - The defects and optical properties of nonpolar (1010) ZnO and Zn 0.9Mg 0.1O epilayers grown on (100) γ-LiAlO 2 substrates by chemical vapor deposition were investigated by x-ray diffraction, transmission electron microscopy and cathodoluminescence. The x-ray rocking curves of the (1100) reflection for the ZnO and Zn 0.9Mg 0.1O epilayers possessed low FWHM values of 504 and 216 arcsec, respectively. Misfit dislocations in high density exhibited at the epilayer/substrate interface with b= 1/3 [1210] for both samples. Basal stacking faults, threading dislocations and inversion domains were observed in the ZnO epilayer with densities on the order of 10 -5 cm -2, 10 -9 cm -2 and 10 -4 cm -1, respectively. On the other hand, only basal stacking faults and threading dislocations were found in the Zn 0.9Mg 0.1O epilayers. The densities of these defects were at least one order of magnitude lower than those of the ZnO one. The Zn 0.9Mg 0.1O epilayers exhibited a near band-edge emission at 3.5 eV whose intensity is about 15 times stronger than that of the ZnO epilayer at 3.3 eV. Monochromatic cathodoluminescence images acquired at the peak energy revealed that the basal stacking faults showed low emission intensities.

AB - The defects and optical properties of nonpolar (1010) ZnO and Zn 0.9Mg 0.1O epilayers grown on (100) γ-LiAlO 2 substrates by chemical vapor deposition were investigated by x-ray diffraction, transmission electron microscopy and cathodoluminescence. The x-ray rocking curves of the (1100) reflection for the ZnO and Zn 0.9Mg 0.1O epilayers possessed low FWHM values of 504 and 216 arcsec, respectively. Misfit dislocations in high density exhibited at the epilayer/substrate interface with b= 1/3 [1210] for both samples. Basal stacking faults, threading dislocations and inversion domains were observed in the ZnO epilayer with densities on the order of 10 -5 cm -2, 10 -9 cm -2 and 10 -4 cm -1, respectively. On the other hand, only basal stacking faults and threading dislocations were found in the Zn 0.9Mg 0.1O epilayers. The densities of these defects were at least one order of magnitude lower than those of the ZnO one. The Zn 0.9Mg 0.1O epilayers exhibited a near band-edge emission at 3.5 eV whose intensity is about 15 times stronger than that of the ZnO epilayer at 3.3 eV. Monochromatic cathodoluminescence images acquired at the peak energy revealed that the basal stacking faults showed low emission intensities.

UR - http://www.scopus.com/inward/record.url?scp=84869009501&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84869009501&partnerID=8YFLogxK

U2 - 10.1149/1.3701526

DO - 10.1149/1.3701526

M3 - Conference contribution

AN - SCOPUS:84869009501

SN - 9781566779593

T3 - ECS Transactions

SP - 63

EP - 71

BT - Wide-Bandgap Semiconductor Materials and Devices 13

ER -

Huang TH, Lin WH, Wu JJ, Chou MMC, Yan T, Chang L. Microstructure characterization of nonpolar ZnO and Zn 1-xMg xO epilayers grown on (100) γ-LiAlO 2 by chemical vapor deposition. In Wide-Bandgap Semiconductor Materials and Devices 13. 7 ed. 2012. p. 63-71. (ECS Transactions; 7). https://doi.org/10.1149/1.3701526