Microstructure development of mechanical-deformation-induced Sn whiskers

Shih Kang Lin; Yuhi Yorikado; Junxiang Jiang; Keun Soo Kim; Katsuaki Suganuma; Sinn Wen Chen; Masanobu Tsujimoto; Isamu Yanada

doi:10.1007/s11664-007-0284-4

Microstructure development of mechanical-deformation-induced Sn whiskers

Shih Kang Lin, Yuhi Yorikado, Junxiang Jiang, Keun Soo Kim, Katsuaki Suganuma, Sinn Wen Chen, Masanobu Tsujimoto, Isamu Yanada

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

The development of the microstructure of mechanical-deformation-induced Sn whiskers on electroplated films has been examined using a focused ion beam system (FIB). The 6-μm-thick matte Sn films were compressed by using a ZrO ₂ ball indenter under ambient conditions. After compression, tin whiskers and small nodules were found adjacent to, and several grains further away from, the indents. The cross-sectional microstructures of the indents and whiskers indicate that the lateral boundaries of the newly created grains caused by recrystallization are the main routes for stress relaxation.

Original language	English
Pages (from-to)	1732-1734
Number of pages	3
Journal	Journal of Electronic Materials
Volume	36
Issue number	12
DOIs	https://doi.org/10.1007/s11664-007-0284-4
Publication status	Published - 2007 Dec

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1007/s11664-007-0284-4

Cite this

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title = "Microstructure development of mechanical-deformation-induced Sn whiskers",

abstract = "The development of the microstructure of mechanical-deformation-induced Sn whiskers on electroplated films has been examined using a focused ion beam system (FIB). The 6-μm-thick matte Sn films were compressed by using a ZrO 2 ball indenter under ambient conditions. After compression, tin whiskers and small nodules were found adjacent to, and several grains further away from, the indents. The cross-sectional microstructures of the indents and whiskers indicate that the lateral boundaries of the newly created grains caused by recrystallization are the main routes for stress relaxation.",

author = "Lin, {Shih Kang} and Yuhi Yorikado and Junxiang Jiang and Kim, {Keun Soo} and Katsuaki Suganuma and Chen, {Sinn Wen} and Masanobu Tsujimoto and Isamu Yanada",

note = "Funding Information: The authors wish to acknowledge financial support from the young researcher interchanging project of the Interchange Association (Japan) and the National Science Council (Taiwan), and equipment funded by the JEITA project (Japan).",

year = "2007",

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doi = "10.1007/s11664-007-0284-4",

language = "English",

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T1 - Microstructure development of mechanical-deformation-induced Sn whiskers

AU - Lin, Shih Kang

AU - Yorikado, Yuhi

AU - Jiang, Junxiang

AU - Kim, Keun Soo

AU - Suganuma, Katsuaki

AU - Chen, Sinn Wen

AU - Tsujimoto, Masanobu

AU - Yanada, Isamu

N1 - Funding Information: The authors wish to acknowledge financial support from the young researcher interchanging project of the Interchange Association (Japan) and the National Science Council (Taiwan), and equipment funded by the JEITA project (Japan).

PY - 2007/12

Y1 - 2007/12

N2 - The development of the microstructure of mechanical-deformation-induced Sn whiskers on electroplated films has been examined using a focused ion beam system (FIB). The 6-μm-thick matte Sn films were compressed by using a ZrO 2 ball indenter under ambient conditions. After compression, tin whiskers and small nodules were found adjacent to, and several grains further away from, the indents. The cross-sectional microstructures of the indents and whiskers indicate that the lateral boundaries of the newly created grains caused by recrystallization are the main routes for stress relaxation.

AB - The development of the microstructure of mechanical-deformation-induced Sn whiskers on electroplated films has been examined using a focused ion beam system (FIB). The 6-μm-thick matte Sn films were compressed by using a ZrO 2 ball indenter under ambient conditions. After compression, tin whiskers and small nodules were found adjacent to, and several grains further away from, the indents. The cross-sectional microstructures of the indents and whiskers indicate that the lateral boundaries of the newly created grains caused by recrystallization are the main routes for stress relaxation.

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Microstructure development of mechanical-deformation-induced Sn whiskers

Abstract

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