Microstructure evolution analysis in Co/Cu layers during the annealing process

Ming Horng Su, Chi Chuan Hwang, Jee Gong Chang, Shi Hao Wang

Research output: Contribution to journalReview article

8 Citations (Scopus)

Abstract

The microstructure evolution in Co/Cu layers during the annealing process was investigated. The many body, tight binding potential method was used to model the interatomic force that acts between the atoms. The results show that the annealing temperature required to cause Co atom migration is greater than that required for Cu atoms.

Original languageEnglish
Pages (from-to)4566-4575
Number of pages10
JournalJournal of Applied Physics
Volume93
Issue number8
DOIs
Publication statusPublished - 2003 Apr 15

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microstructure
annealing
atoms
interatomic forces
causes
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Su, Ming Horng ; Hwang, Chi Chuan ; Chang, Jee Gong ; Wang, Shi Hao. / Microstructure evolution analysis in Co/Cu layers during the annealing process. In: Journal of Applied Physics. 2003 ; Vol. 93, No. 8. pp. 4566-4575.
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Microstructure evolution analysis in Co/Cu layers during the annealing process. / Su, Ming Horng; Hwang, Chi Chuan; Chang, Jee Gong; Wang, Shi Hao.

In: Journal of Applied Physics, Vol. 93, No. 8, 15.04.2003, p. 4566-4575.

Research output: Contribution to journalReview article

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