Microstructure of oxidized Ge0.78Si0.12 annealed in a reducing ambient

N. D. Theodore; W. S. Liu; D. Y.C. Lie; T. K. Cams; K. L. Wang

Microstructure of oxidized Ge_0.78Si_0.12 annealed in a reducing ambient

N. D. Theodore, W. S. Liu, D. Y.C. Lie, T. K. Cams, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Conference article › peer-review

Abstract

Transmission electron microscopy, conventional and high-resolution, is used to characterize the microstructural behavior of oxidized Ge_0.78Si_0.12 layers annealed in a reducing 95% N₂ + 5% H₂ ambient. An epitaxial Ge layer grows by solid-phase epitaxy on an underlying Ge_0.78Si_0.12 seeding layer with a Ge-SiO₂ matrix positioned between them. Defect densities in the epitaxial Ge are significantly lower than in the underlying Ge_0.78Si_0.12. Microstructural details of this behavior are investigated.

Original language	English
Pages (from-to)	127-132
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	379
Publication status	Published - 1995
Event	Proceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA Duration: 1995 Apr 17 → 1995 Apr 20

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{4bc79bfc16ca4fff94c0e8bcf835f597,

title = "Microstructure of oxidized Ge0.78Si0.12 annealed in a reducing ambient",

abstract = "Transmission electron microscopy, conventional and high-resolution, is used to characterize the microstructural behavior of oxidized Ge0.78Si0.12 layers annealed in a reducing 95% N2 + 5% H2 ambient. An epitaxial Ge layer grows by solid-phase epitaxy on an underlying Ge0.78Si0.12 seeding layer with a Ge-SiO2 matrix positioned between them. Defect densities in the epitaxial Ge are significantly lower than in the underlying Ge0.78Si0.12. Microstructural details of this behavior are investigated.",

author = "Theodore, {N. D.} and Liu, {W. S.} and Lie, {D. Y.C.} and Cams, {T. K.} and Wang, {K. L.}",

year = "1995",

language = "English",

volume = "379",

pages = "127--132",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Spring Meeting ; Conference date: 17-04-1995 Through 20-04-1995",

}

TY - JOUR

T1 - Microstructure of oxidized Ge0.78Si0.12 annealed in a reducing ambient

AU - Theodore, N. D.

AU - Liu, W. S.

AU - Lie, D. Y.C.

AU - Cams, T. K.

AU - Wang, K. L.

PY - 1995

Y1 - 1995

N2 - Transmission electron microscopy, conventional and high-resolution, is used to characterize the microstructural behavior of oxidized Ge0.78Si0.12 layers annealed in a reducing 95% N2 + 5% H2 ambient. An epitaxial Ge layer grows by solid-phase epitaxy on an underlying Ge0.78Si0.12 seeding layer with a Ge-SiO2 matrix positioned between them. Defect densities in the epitaxial Ge are significantly lower than in the underlying Ge0.78Si0.12. Microstructural details of this behavior are investigated.

AB - Transmission electron microscopy, conventional and high-resolution, is used to characterize the microstructural behavior of oxidized Ge0.78Si0.12 layers annealed in a reducing 95% N2 + 5% H2 ambient. An epitaxial Ge layer grows by solid-phase epitaxy on an underlying Ge0.78Si0.12 seeding layer with a Ge-SiO2 matrix positioned between them. Defect densities in the epitaxial Ge are significantly lower than in the underlying Ge0.78Si0.12. Microstructural details of this behavior are investigated.

UR - http://www.scopus.com/inward/record.url?scp=0029483090&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029483090&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0029483090

SN - 0272-9172

VL - 379

SP - 127

EP - 132

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1995 MRS Spring Meeting

Y2 - 17 April 1995 through 20 April 1995

ER -

Microstructure of oxidized Ge_0.78Si_0.12 annealed in a reducing ambient

Abstract

All Science Journal Classification (ASJC) codes

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