Microstructures and the charge-discharge characteristics of advanced Al-Si thin film materials

Chao Han Wu, Fei Yi Hung, Truan Sheng Lui, Li Hui Chen

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

In this study, radio frequency magnetron sputtering was used to prepare Al-Si film negative electrodes and the effect of pre-sputtered Al thin film on the charge-discharge capacity characteristics are discussed. The pre-sputtered 40 nm Al thin film not only reduced the resistivity of the composite negative electrode film, but also prevented peeling between the Al-Si films and Cu foils. In addition, annealing in the vacuum led to an improvement on the index of crystalline (IOC) of the negative electrode matrix and enhanced the diffusion of the pre-sputtered Al film. The annealed Al-Si film with diffused Al film saw an enhancement in the bonding characteristics at the interface stability and the charge-discharge cycling life at high temperature (55°C).

Original languageEnglish
Pages (from-to)1958-1963
Number of pages6
JournalMaterials Transactions
Volume51
Issue number10
DOIs
Publication statusPublished - 2010 Oct

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Microstructures and the charge-discharge characteristics of advanced Al-Si thin film materials'. Together they form a unique fingerprint.

Cite this