This work presents AlGaN/GaN high-electron mobility transistors (HEMTs) that are grown on silicon. Various passivation layers are deposited on AlGaN/GaN HEMTs. AlGaN/GaN HEMTs were fabricated with TiO2 dielectrics, and their performance was compared with that of unpassivated and that of HfO2-passivated HEMTs. The TiO2-passivated HEMT with a gate length of 1 μm exhibits a maximum extrinsic transconductance of 134.4 mS mm-1, a current-gain cutoff frequency of 10.62 GHz, and a maximum frequency of oscillation of 16.37 GHz. Capping with any of the dielectric materials used herein improves the device performance over that of the unpassivated HEMTs. Additionally, experimental data demonstrate that the use of TiO2 is a favorable alternative to HfO2 passivation. This work is the first to present the microwave power of TiO2-passivated AlGaN/GaN HEMTs.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry