Microwave characteristic of SiON thin film surface passivation on low resistivity silicon wafer

Sin Pei Wang; Tzu Chun Tai; Jia Hao Lin; Cheng Yuan Hung; Hung Wei Wu; Yeong Her Wang; Shih Kun Liu

doi:10.1109/ICASI.2018.8394479

Microwave characteristic of SiON thin film surface passivation on low resistivity silicon wafer

Sin Pei Wang, Tzu Chun Tai, Jia Hao Lin, Cheng Yuan Hung, Hung Wei Wu, Yeong Her Wang, Shih Kun Liu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

This study presents the amorphous silicon-oxy-nitride (SiON) thin film surface passivation layer depositing by very high frequency plasma-enhanced chemical vapor deposition (VHF PECVD) for applying on the application of surface passivation on standard low-resistivity silicon (LR-Si) substrate. The finite-ground coplanar waveguide (FG-CPW) line is fabricated on the SiON/LR-Si structure for investigating the microwave properties. The proposed finite-ground coplanar waveguide line is measured by accurate microwave on-wafer analysis platform up to 60 GHz. The surface passivation layer can improve microwave attenuation of the FG-CPW line. This method can be applied in radio frequency integrated circuit (RFIC).

Original language	English
Title of host publication	Proceedings of 4th IEEE International Conference on Applied System Innovation 2018, ICASI 2018
Editors	Artde Donald Kin-Tak Lam, Stephen D. Prior, Teen-Hang Meen
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1125-1128
Number of pages	4
ISBN (Electronic)	9781538643426
DOIs	https://doi.org/10.1109/ICASI.2018.8394479
Publication status	Published - 2018 Jun 22
Event	4th IEEE International Conference on Applied System Innovation, ICASI 2018 - Chiba, Japan Duration: 2018 Apr 13 → 2018 Apr 17

Publication series

Name	Proceedings of 4th IEEE International Conference on Applied System Innovation 2018, ICASI 2018

Other

Other	4th IEEE International Conference on Applied System Innovation, ICASI 2018
Country/Territory	Japan
City	Chiba
Period	18-04-13 → 18-04-17

All Science Journal Classification (ASJC) codes

Computer Networks and Communications
Hardware and Architecture
Energy Engineering and Power Technology
Control and Systems Engineering
Mechanical Engineering
Control and Optimization
Modelling and Simulation
Biomedical Engineering

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10.1109/ICASI.2018.8394479

Cite this

Wang, S. P., Tai, T. C., Lin, J. H., Hung, C. Y., Wu, H. W., Wang, Y. H., & Liu, S. K. (2018). Microwave characteristic of SiON thin film surface passivation on low resistivity silicon wafer. In A. D. K-T. Lam, S. D. Prior, & T-H. Meen (Eds.), Proceedings of 4th IEEE International Conference on Applied System Innovation 2018, ICASI 2018 (pp. 1125-1128). (Proceedings of 4th IEEE International Conference on Applied System Innovation 2018, ICASI 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICASI.2018.8394479

Wang, Sin Pei ; Tai, Tzu Chun ; Lin, Jia Hao ; Hung, Cheng Yuan ; Wu, Hung Wei ; Wang, Yeong Her ; Liu, Shih Kun. / Microwave characteristic of SiON thin film surface passivation on low resistivity silicon wafer. Proceedings of 4th IEEE International Conference on Applied System Innovation 2018, ICASI 2018. editor / Artde Donald Kin-Tak Lam ; Stephen D. Prior ; Teen-Hang Meen. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 1125-1128 (Proceedings of 4th IEEE International Conference on Applied System Innovation 2018, ICASI 2018).

@inproceedings{ca20a38e8c92484da68235d457e3d2ca,

title = "Microwave characteristic of SiON thin film surface passivation on low resistivity silicon wafer",

abstract = "This study presents the amorphous silicon-oxy-nitride (SiON) thin film surface passivation layer depositing by very high frequency plasma-enhanced chemical vapor deposition (VHF PECVD) for applying on the application of surface passivation on standard low-resistivity silicon (LR-Si) substrate. The finite-ground coplanar waveguide (FG-CPW) line is fabricated on the SiON/LR-Si structure for investigating the microwave properties. The proposed finite-ground coplanar waveguide line is measured by accurate microwave on-wafer analysis platform up to 60 GHz. The surface passivation layer can improve microwave attenuation of the FG-CPW line. This method can be applied in radio frequency integrated circuit (RFIC).",

author = "Wang, {Sin Pei} and Tai, {Tzu Chun} and Lin, {Jia Hao} and Hung, {Cheng Yuan} and Wu, {Hung Wei} and Wang, {Yeong Her} and Liu, {Shih Kun}",

note = "Funding Information: This work was supported by the Ministry of Science and Technology under Contract MOST 106-3011-E-168-001 and MOST 106-2221-E-168-020. Publisher Copyright: {\textcopyright} 2018 IEEE.; 4th IEEE International Conference on Applied System Innovation, ICASI 2018 ; Conference date: 13-04-2018 Through 17-04-2018",

year = "2018",

month = jun,

day = "22",

doi = "10.1109/ICASI.2018.8394479",

language = "English",

series = "Proceedings of 4th IEEE International Conference on Applied System Innovation 2018, ICASI 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1125--1128",

editor = "Lam, {Artde Donald Kin-Tak} and Prior, {Stephen D.} and Teen-Hang Meen",

booktitle = "Proceedings of 4th IEEE International Conference on Applied System Innovation 2018, ICASI 2018",

address = "United States",

}

Wang, SP, Tai, TC, Lin, JH, Hung, CY, Wu, HW, Wang, YH & Liu, SK 2018, Microwave characteristic of SiON thin film surface passivation on low resistivity silicon wafer. in ADK-T Lam, SD Prior & T-H Meen (eds), Proceedings of 4th IEEE International Conference on Applied System Innovation 2018, ICASI 2018. Proceedings of 4th IEEE International Conference on Applied System Innovation 2018, ICASI 2018, Institute of Electrical and Electronics Engineers Inc., pp. 1125-1128, 4th IEEE International Conference on Applied System Innovation, ICASI 2018, Chiba, Japan, 18-04-13. https://doi.org/10.1109/ICASI.2018.8394479

Microwave characteristic of SiON thin film surface passivation on low resistivity silicon wafer. / Wang, Sin Pei; Tai, Tzu Chun; Lin, Jia Hao; Hung, Cheng Yuan; Wu, Hung Wei; Wang, Yeong Her; Liu, Shih Kun.

Proceedings of 4th IEEE International Conference on Applied System Innovation 2018, ICASI 2018. ed. / Artde Donald Kin-Tak Lam; Stephen D. Prior; Teen-Hang Meen. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1125-1128 (Proceedings of 4th IEEE International Conference on Applied System Innovation 2018, ICASI 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Microwave characteristic of SiON thin film surface passivation on low resistivity silicon wafer

AU - Wang, Sin Pei

AU - Tai, Tzu Chun

AU - Lin, Jia Hao

AU - Hung, Cheng Yuan

AU - Wu, Hung Wei

AU - Wang, Yeong Her

AU - Liu, Shih Kun

PY - 2018/6/22

Y1 - 2018/6/22

N2 - This study presents the amorphous silicon-oxy-nitride (SiON) thin film surface passivation layer depositing by very high frequency plasma-enhanced chemical vapor deposition (VHF PECVD) for applying on the application of surface passivation on standard low-resistivity silicon (LR-Si) substrate. The finite-ground coplanar waveguide (FG-CPW) line is fabricated on the SiON/LR-Si structure for investigating the microwave properties. The proposed finite-ground coplanar waveguide line is measured by accurate microwave on-wafer analysis platform up to 60 GHz. The surface passivation layer can improve microwave attenuation of the FG-CPW line. This method can be applied in radio frequency integrated circuit (RFIC).

AB - This study presents the amorphous silicon-oxy-nitride (SiON) thin film surface passivation layer depositing by very high frequency plasma-enhanced chemical vapor deposition (VHF PECVD) for applying on the application of surface passivation on standard low-resistivity silicon (LR-Si) substrate. The finite-ground coplanar waveguide (FG-CPW) line is fabricated on the SiON/LR-Si structure for investigating the microwave properties. The proposed finite-ground coplanar waveguide line is measured by accurate microwave on-wafer analysis platform up to 60 GHz. The surface passivation layer can improve microwave attenuation of the FG-CPW line. This method can be applied in radio frequency integrated circuit (RFIC).

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DO - 10.1109/ICASI.2018.8394479

M3 - Conference contribution

AN - SCOPUS:85050302911

T3 - Proceedings of 4th IEEE International Conference on Applied System Innovation 2018, ICASI 2018

SP - 1125

EP - 1128

BT - Proceedings of 4th IEEE International Conference on Applied System Innovation 2018, ICASI 2018

A2 - Lam, Artde Donald Kin-Tak

A2 - Prior, Stephen D.

A2 - Meen, Teen-Hang

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 4th IEEE International Conference on Applied System Innovation, ICASI 2018

Y2 - 13 April 2018 through 17 April 2018

ER -

Wang SP, Tai TC, Lin JH, Hung CY, Wu HW, Wang YH et al. Microwave characteristic of SiON thin film surface passivation on low resistivity silicon wafer. In Lam ADK-T, Prior SD, Meen T-H, editors, Proceedings of 4th IEEE International Conference on Applied System Innovation 2018, ICASI 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1125-1128. (Proceedings of 4th IEEE International Conference on Applied System Innovation 2018, ICASI 2018). https://doi.org/10.1109/ICASI.2018.8394479

Microwave characteristic of SiON thin film surface passivation on low resistivity silicon wafer

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