@inproceedings{ca20a38e8c92484da68235d457e3d2ca,
title = "Microwave characteristic of SiON thin film surface passivation on low resistivity silicon wafer",
abstract = "This study presents the amorphous silicon-oxy-nitride (SiON) thin film surface passivation layer depositing by very high frequency plasma-enhanced chemical vapor deposition (VHF PECVD) for applying on the application of surface passivation on standard low-resistivity silicon (LR-Si) substrate. The finite-ground coplanar waveguide (FG-CPW) line is fabricated on the SiON/LR-Si structure for investigating the microwave properties. The proposed finite-ground coplanar waveguide line is measured by accurate microwave on-wafer analysis platform up to 60 GHz. The surface passivation layer can improve microwave attenuation of the FG-CPW line. This method can be applied in radio frequency integrated circuit (RFIC).",
author = "Wang, {Sin Pei} and Tai, {Tzu Chun} and Lin, {Jia Hao} and Hung, {Cheng Yuan} and Wu, {Hung Wei} and Wang, {Yeong Her} and Liu, {Shih Kun}",
note = "Funding Information: This work was supported by the Ministry of Science and Technology under Contract MOST 106-3011-E-168-001 and MOST 106-2221-E-168-020. Publisher Copyright: {\textcopyright} 2018 IEEE.; 4th IEEE International Conference on Applied System Innovation, ICASI 2018 ; Conference date: 13-04-2018 Through 17-04-2018",
year = "2018",
month = jun,
day = "22",
doi = "10.1109/ICASI.2018.8394479",
language = "English",
series = "Proceedings of 4th IEEE International Conference on Applied System Innovation 2018, ICASI 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1125--1128",
editor = "Lam, {Artde Donald Kin-Tak} and Prior, {Stephen D.} and Teen-Hang Meen",
booktitle = "Proceedings of 4th IEEE International Conference on Applied System Innovation 2018, ICASI 2018",
address = "United States",
}