Microwave characteristics of CuO-doped Ba(Ni1/3Nb2/3)O3 dielectric resonators

Cheng Shing Hsu, Cheng Liang Huang, Lam Sang Ha

Research output: Contribution to journalArticlepeer-review

Abstract

The dielectric properties of CuO-doped Ba(Ni1/3/Nb2/3)O3 ceramics were investigated. A large sintering temperature reduction (100-200°C) was achieved by adding CuO to the Ba(Ni1/3Nb2/3)03 ceramics. With 0.5 wt% CuO addition, a dielectric constant of 31.2 a Q x f value of 38 000 (at 9 GHz) and a τf value of -0.2 ppm/°C were obtained for Ba(Ni1/3Nb2/3)O1/3 ceramics at 1320°C for 6 h. The decrease in Q x f value at higher CuO addition (1 wt%) was owing to that the grain boundary phases were pronounced product.

Original languageEnglish
Pages (from-to)209-212
Number of pages4
JournalJournal of Materials Science Letters
Volume22
Issue number3
DOIs
Publication statusPublished - 2003 Feb 1

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Fingerprint Dive into the research topics of 'Microwave characteristics of CuO-doped Ba(Ni<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub> dielectric resonators'. Together they form a unique fingerprint.

Cite this