The dielectric properties of CuO-doped Ba(Ni1/3/Nb2/3)O3 ceramics were investigated. A large sintering temperature reduction (100-200°C) was achieved by adding CuO to the Ba(Ni1/3Nb2/3)03 ceramics. With 0.5 wt% CuO addition, a dielectric constant of 31.2 a Q x f value of 38 000 (at 9 GHz) and a τf value of -0.2 ppm/°C were obtained for Ba(Ni1/3Nb2/3)O1/3 ceramics at 1320°C for 6 h. The decrease in Q x f value at higher CuO addition (1 wt%) was owing to that the grain boundary phases were pronounced product.
All Science Journal Classification (ASJC) codes
- Materials Science(all)