Microwave complementary doped-channel field-effect transistors

Jung Hui Tsai, Shao Yen Chiu, Wen Shiung Lour, Wen Chau Liu, Chien Ming Li, Ning Xing Su, Yi Zhen Wu, Yin Shan Huang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


In this paper, the device performance and complementary inverter of the InGaP/InGaAs/GaAs doped-channel field-effect transistors (DCFETs) by two-dimensional semiconductor simulation are demonstrated. Due to the relatively large conduction (valance) band discontinuity at InGaP/InGaAs interface, it provides good confinement effect for transporting carriers in InGaAs channel layer for the n-channel (p-channel) device. The large gate turn-on voltage is achieved due to the employment of the wide energy-gap InGaP material as gate layer. The ft and fmax are of 6.5 (2.1) and 25 (5) GHz for the n-channel (p-channel) device. Furthermore, the co-integrated structures, by the combination of n- and p-channel field-effect transistors, could form a complementary inverter and the relatively large noise margins are achieved.

Original languageEnglish
Pages (from-to)33-38
Number of pages6
JournalSuperlattices and Microstructures
Issue number1
Publication statusPublished - 2009 Jan

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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