Microwave complementary doped-channel field-effect transistors

Jung Hui Tsai; Shao Yen Chiu; Wen Shiung Lour; Wen Chau Liu; Chien Ming Li; Ning Xing Su; Yi Zhen Wu; Yin Shan Huang

doi:10.1016/j.spmi.2008.11.019

Microwave complementary doped-channel field-effect transistors

Jung Hui Tsai, Shao Yen Chiu, Wen Shiung Lour, Wen Chau Liu, Chien Ming Li, Ning Xing Su, Yi Zhen Wu, Yin Shan Huang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this paper, the device performance and complementary inverter of the InGaP/InGaAs/GaAs doped-channel field-effect transistors (DCFETs) by two-dimensional semiconductor simulation are demonstrated. Due to the relatively large conduction (valance) band discontinuity at InGaP/InGaAs interface, it provides good confinement effect for transporting carriers in InGaAs channel layer for the n-channel (p-channel) device. The large gate turn-on voltage is achieved due to the employment of the wide energy-gap InGaP material as gate layer. The f_t and f_max are of 6.5 (2.1) and 25 (5) GHz for the n-channel (p-channel) device. Furthermore, the co-integrated structures, by the combination of n- and p-channel field-effect transistors, could form a complementary inverter and the relatively large noise margins are achieved.

Original language	English
Pages (from-to)	33-38
Number of pages	6
Journal	Superlattices and Microstructures
Volume	45
Issue number	1
DOIs	https://doi.org/10.1016/j.spmi.2008.11.019
Publication status	Published - 2009 Jan

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.spmi.2008.11.019

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title = "Microwave complementary doped-channel field-effect transistors",

abstract = "In this paper, the device performance and complementary inverter of the InGaP/InGaAs/GaAs doped-channel field-effect transistors (DCFETs) by two-dimensional semiconductor simulation are demonstrated. Due to the relatively large conduction (valance) band discontinuity at InGaP/InGaAs interface, it provides good confinement effect for transporting carriers in InGaAs channel layer for the n-channel (p-channel) device. The large gate turn-on voltage is achieved due to the employment of the wide energy-gap InGaP material as gate layer. The ft and fmax are of 6.5 (2.1) and 25 (5) GHz for the n-channel (p-channel) device. Furthermore, the co-integrated structures, by the combination of n- and p-channel field-effect transistors, could form a complementary inverter and the relatively large noise margins are achieved.",

author = "Tsai, {Jung Hui} and Chiu, {Shao Yen} and Lour, {Wen Shiung} and Liu, {Wen Chau} and Li, {Chien Ming} and Su, {Ning Xing} and Wu, {Yi Zhen} and Huang, {Yin Shan}",

note = "Funding Information: This work is supported by the National Science Council of the Republic of China under Contract No. NSC 97-2221-E-017-012. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.",

year = "2009",

month = jan,

doi = "10.1016/j.spmi.2008.11.019",

language = "English",

volume = "45",

pages = "33--38",

journal = "Superlattices and Microstructures",

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AU - Tsai, Jung Hui

AU - Chiu, Shao Yen

AU - Lour, Wen Shiung

AU - Liu, Wen Chau

AU - Li, Chien Ming

AU - Su, Ning Xing

AU - Wu, Yi Zhen

AU - Huang, Yin Shan

N1 - Funding Information: This work is supported by the National Science Council of the Republic of China under Contract No. NSC 97-2221-E-017-012. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.

PY - 2009/1

Y1 - 2009/1

N2 - In this paper, the device performance and complementary inverter of the InGaP/InGaAs/GaAs doped-channel field-effect transistors (DCFETs) by two-dimensional semiconductor simulation are demonstrated. Due to the relatively large conduction (valance) band discontinuity at InGaP/InGaAs interface, it provides good confinement effect for transporting carriers in InGaAs channel layer for the n-channel (p-channel) device. The large gate turn-on voltage is achieved due to the employment of the wide energy-gap InGaP material as gate layer. The ft and fmax are of 6.5 (2.1) and 25 (5) GHz for the n-channel (p-channel) device. Furthermore, the co-integrated structures, by the combination of n- and p-channel field-effect transistors, could form a complementary inverter and the relatively large noise margins are achieved.

AB - In this paper, the device performance and complementary inverter of the InGaP/InGaAs/GaAs doped-channel field-effect transistors (DCFETs) by two-dimensional semiconductor simulation are demonstrated. Due to the relatively large conduction (valance) band discontinuity at InGaP/InGaAs interface, it provides good confinement effect for transporting carriers in InGaAs channel layer for the n-channel (p-channel) device. The large gate turn-on voltage is achieved due to the employment of the wide energy-gap InGaP material as gate layer. The ft and fmax are of 6.5 (2.1) and 25 (5) GHz for the n-channel (p-channel) device. Furthermore, the co-integrated structures, by the combination of n- and p-channel field-effect transistors, could form a complementary inverter and the relatively large noise margins are achieved.

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JO - Superlattices and Microstructures

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Microwave complementary doped-channel field-effect transistors

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