The effects of low-level WO3 addition (up to 6 wt %) on the microstructures and microwave dielectric properties of Zr0.8Sn 0.2TiO4 ceramics have been investigated. A second phase was not observed in Zr0.8Sn0.2TiO4 ceramics with 2-6 wt % WO3 added. Degradation in dielectric constant (εr) occurred for the doped Zr0.8Sn 0.2TiO4 ceramics owing to the formation of a grain boundary phase. Moreover, the temperature coefficient of resonant frequency (τf) was not significantly affected, while the unloaded quality factor Q was effectively increased by WO3 addition. An ε r of 33.4, a Q × f of 56000 GHz, and τf of 0 ppm/°C were obtained for 4 wt % WO3-doped Zr0.8Sn 0.2TiO4 ceramic sintered at 1400°C for 3 h.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 A|
|Publication status||Published - 2006 Apr 7|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)