Microwave dielectric characteristics of Zr0.8Sn 0.2TiO4 ceramics with WO3 additives

Ching Fang Tseng; Cheng Hsing Hsu; Cheng Liang Huang; Chung Chuang Wei

doi:10.1143/JJAP.45.2680

Microwave dielectric characteristics of Zr_0.8Sn _0.2TiO₄ ceramics with WO₃ additives

Ching Fang Tseng, Cheng Hsing Hsu, Cheng Liang Huang, Chung Chuang Wei

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The effects of low-level WO₃ addition (up to 6 wt %) on the microstructures and microwave dielectric properties of Zr_0.8Sn _0.2TiO₄ ceramics have been investigated. A second phase was not observed in Zr_0.8Sn_0.2TiO₄ ceramics with 2-6 wt % WO₃ added. Degradation in dielectric constant (ε_r) occurred for the doped Zr_0.8Sn _0.2TiO₄ ceramics owing to the formation of a grain boundary phase. Moreover, the temperature coefficient of resonant frequency (τ_f) was not significantly affected, while the unloaded quality factor Q was effectively increased by WO₃ addition. An ε _r of 33.4, a Q × f of 56000 GHz, and τ_f of 0 ppm/°C were obtained for 4 wt % WO₃-doped Zr_0.8Sn _0.2TiO₄ ceramic sintered at 1400°C for 3 h.

Original language	English
Pages (from-to)	2680-2682
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	4 A
DOIs	https://doi.org/10.1143/JJAP.45.2680
Publication status	Published - 2006 Apr 7

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Microwave dielectric characteristics of Zr0.8Sn 0.2TiO4 ceramics with WO3 additives",

abstract = "The effects of low-level WO3 addition (up to 6 wt %) on the microstructures and microwave dielectric properties of Zr0.8Sn 0.2TiO4 ceramics have been investigated. A second phase was not observed in Zr0.8Sn0.2TiO4 ceramics with 2-6 wt % WO3 added. Degradation in dielectric constant (εr) occurred for the doped Zr0.8Sn 0.2TiO4 ceramics owing to the formation of a grain boundary phase. Moreover, the temperature coefficient of resonant frequency (τf) was not significantly affected, while the unloaded quality factor Q was effectively increased by WO3 addition. An ε r of 33.4, a Q × f of 56000 GHz, and τf of 0 ppm/°C were obtained for 4 wt % WO3-doped Zr0.8Sn 0.2TiO4 ceramic sintered at 1400°C for 3 h.",

author = "Tseng, {Ching Fang} and Hsu, {Cheng Hsing} and Huang, {Cheng Liang} and Wei, {Chung Chuang}",

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Microwave dielectric characteristics of Zr_0.8Sn _0.2TiO₄ ceramics with WO₃ additives. / Tseng, Ching Fang; Hsu, Cheng Hsing; Huang, Cheng Liang; Wei, Chung Chuang.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 4 A, 07.04.2006, p. 2680-2682.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Microwave dielectric characteristics of Zr0.8Sn 0.2TiO4 ceramics with WO3 additives

AU - Tseng, Ching Fang

AU - Hsu, Cheng Hsing

AU - Huang, Cheng Liang

AU - Wei, Chung Chuang

PY - 2006/4/7

Y1 - 2006/4/7

N2 - The effects of low-level WO3 addition (up to 6 wt %) on the microstructures and microwave dielectric properties of Zr0.8Sn 0.2TiO4 ceramics have been investigated. A second phase was not observed in Zr0.8Sn0.2TiO4 ceramics with 2-6 wt % WO3 added. Degradation in dielectric constant (εr) occurred for the doped Zr0.8Sn 0.2TiO4 ceramics owing to the formation of a grain boundary phase. Moreover, the temperature coefficient of resonant frequency (τf) was not significantly affected, while the unloaded quality factor Q was effectively increased by WO3 addition. An ε r of 33.4, a Q × f of 56000 GHz, and τf of 0 ppm/°C were obtained for 4 wt % WO3-doped Zr0.8Sn 0.2TiO4 ceramic sintered at 1400°C for 3 h.

AB - The effects of low-level WO3 addition (up to 6 wt %) on the microstructures and microwave dielectric properties of Zr0.8Sn 0.2TiO4 ceramics have been investigated. A second phase was not observed in Zr0.8Sn0.2TiO4 ceramics with 2-6 wt % WO3 added. Degradation in dielectric constant (εr) occurred for the doped Zr0.8Sn 0.2TiO4 ceramics owing to the formation of a grain boundary phase. Moreover, the temperature coefficient of resonant frequency (τf) was not significantly affected, while the unloaded quality factor Q was effectively increased by WO3 addition. An ε r of 33.4, a Q × f of 56000 GHz, and τf of 0 ppm/°C were obtained for 4 wt % WO3-doped Zr0.8Sn 0.2TiO4 ceramic sintered at 1400°C for 3 h.

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