Microwave dielectric properties and microstructures of La(Mg 1/2Ti1/2)O3 with CuO-doped

Yuan Bin Chen; Cheng Liang Huang; Ching Wen Lo

doi:10.1016/j.mseb.2005.11.027

Microwave dielectric properties and microstructures of La(Mg _1/2Ti_1/2)O₃ with CuO-doped

Yuan Bin Chen
, Cheng Liang Huang
, Ching Wen Lo

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

The effects of sintering aid addition on the microstructures and microwave dielectric properties of La(Mg_1/2Ti_1/2)O₃ ceramics were investigated. CuO was selected as liquid phase sintering aid to lower the sintering temperature of La(Mg_1/2Ti_1/2)O ₃ ceramics. With CuO addition, the densification temperature of La(Mg_1/2Ti_1/2)O₃ can be effectively reduced from 1600 to 1300-1500 °C. It is found that doping of CuO (1-4 wt%) can significantly improve the density and dielectric properties of La(Mg _1/2Ti_1/2)O₃ ceramics. Second phases were observed at the level of 1-4 wt% CuO additions. The quality factor Qxf was strongly dependent upon the amount of additions. Qxf values of 33,800 and 10,600 GHz could be obtained at 1300-1500 °C with 1 and 4 wt% CuO addition, respectively. During all addition ranges, the relative dielectric constants were different and ranged from 25.89 to 29.63. The temperature coefficient varies from -52.11 to -68.22 ppm/°C.

Original language	English
Pages (from-to)	98-102
Number of pages	5
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	128
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mseb.2005.11.027
Publication status	Published - 2006 Mar 15

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{dcbd1fbdd6cc4be29d6b0c406baa88fa,

title = "Microwave dielectric properties and microstructures of La(Mg 1/2Ti1/2)O3 with CuO-doped",

abstract = "The effects of sintering aid addition on the microstructures and microwave dielectric properties of La(Mg1/2Ti1/2)O3 ceramics were investigated. CuO was selected as liquid phase sintering aid to lower the sintering temperature of La(Mg1/2Ti1/2)O 3 ceramics. With CuO addition, the densification temperature of La(Mg1/2Ti1/2)O3 can be effectively reduced from 1600 to 1300-1500 °C. It is found that doping of CuO (1-4 wt\%) can significantly improve the density and dielectric properties of La(Mg 1/2Ti1/2)O3 ceramics. Second phases were observed at the level of 1-4 wt\% CuO additions. The quality factor Qxf was strongly dependent upon the amount of additions. Qxf values of 33,800 and 10,600 GHz could be obtained at 1300-1500 °C with 1 and 4 wt\% CuO addition, respectively. During all addition ranges, the relative dielectric constants were different and ranged from 25.89 to 29.63. The temperature coefficient varies from -52.11 to -68.22 ppm/°C.",

author = "Chen, \{Yuan Bin\} and Huang, \{Cheng Liang\} and Lo, \{Ching Wen\}",

note = "Funding Information: The authors would like to thank the National Science Council of the Republic of China, Taiwan, for financially supporting this research under Contract No. NSC-93-2213-E-006-038.",

year = "2006",

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doi = "10.1016/j.mseb.2005.11.027",

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AU - Chen, Yuan Bin

AU - Huang, Cheng Liang

AU - Lo, Ching Wen

N1 - Funding Information: The authors would like to thank the National Science Council of the Republic of China, Taiwan, for financially supporting this research under Contract No. NSC-93-2213-E-006-038.

PY - 2006/3/15

Y1 - 2006/3/15

N2 - The effects of sintering aid addition on the microstructures and microwave dielectric properties of La(Mg1/2Ti1/2)O3 ceramics were investigated. CuO was selected as liquid phase sintering aid to lower the sintering temperature of La(Mg1/2Ti1/2)O 3 ceramics. With CuO addition, the densification temperature of La(Mg1/2Ti1/2)O3 can be effectively reduced from 1600 to 1300-1500 °C. It is found that doping of CuO (1-4 wt%) can significantly improve the density and dielectric properties of La(Mg 1/2Ti1/2)O3 ceramics. Second phases were observed at the level of 1-4 wt% CuO additions. The quality factor Qxf was strongly dependent upon the amount of additions. Qxf values of 33,800 and 10,600 GHz could be obtained at 1300-1500 °C with 1 and 4 wt% CuO addition, respectively. During all addition ranges, the relative dielectric constants were different and ranged from 25.89 to 29.63. The temperature coefficient varies from -52.11 to -68.22 ppm/°C.

AB - The effects of sintering aid addition on the microstructures and microwave dielectric properties of La(Mg1/2Ti1/2)O3 ceramics were investigated. CuO was selected as liquid phase sintering aid to lower the sintering temperature of La(Mg1/2Ti1/2)O 3 ceramics. With CuO addition, the densification temperature of La(Mg1/2Ti1/2)O3 can be effectively reduced from 1600 to 1300-1500 °C. It is found that doping of CuO (1-4 wt%) can significantly improve the density and dielectric properties of La(Mg 1/2Ti1/2)O3 ceramics. Second phases were observed at the level of 1-4 wt% CuO additions. The quality factor Qxf was strongly dependent upon the amount of additions. Qxf values of 33,800 and 10,600 GHz could be obtained at 1300-1500 °C with 1 and 4 wt% CuO addition, respectively. During all addition ranges, the relative dielectric constants were different and ranged from 25.89 to 29.63. The temperature coefficient varies from -52.11 to -68.22 ppm/°C.

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Microwave dielectric properties and microstructures of La(Mg _1/2Ti_1/2)O₃ with CuO-doped

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