Microwave dielectric properties and microstructures of MgTa 2O6 ceramics with CuO addition

Cheng-Liang Huang; Kuo Hau Chiang; Chi-Yuen Huang

doi:10.1016/j.matchemphys.2004.10.037

Microwave dielectric properties and microstructures of MgTa ₂O₆ ceramics with CuO addition

Cheng-Liang Huang, Kuo Hau Chiang, Chi-Yuen Huang

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

The effect of CuO addition on the microstructures and the microwave dielectric properties of MgTa₂O₆ ceramics has been investigated. It is found that low level-doping of CuO (up to 1 wt.%) can significantly improve the density of the specimens and their microwave dielectric properties. Tremendous sintering temperature reduction can be achieved due to the liquid phase effect of CuO addition observed by scanning electronic microscopy (SEM). The sintered samples exhibit excellent microwave dielectric properties, which depend upon the liquid phase and the sintering temperature. With 0.5 wt.% CuO addition, MgTa₂O₆ ceramic can be sintered at 1400 °C and possesses a dielectric constant (ε_r) of 28, a Q × f value of 58000 GHz and a temperature coefficient of resonant frequency (τ_f) of 18 ppm/°C.

Original language	English
Pages (from-to)	373-377
Number of pages	5
Journal	Materials Chemistry and Physics
Volume	90
Issue number	2-3
DOIs	https://doi.org/10.1016/j.matchemphys.2004.10.037
Publication status	Published - 2005 Apr 15

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics

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10.1016/j.matchemphys.2004.10.037

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title = "Microwave dielectric properties and microstructures of MgTa 2O6 ceramics with CuO addition",

abstract = "The effect of CuO addition on the microstructures and the microwave dielectric properties of MgTa2O6 ceramics has been investigated. It is found that low level-doping of CuO (up to 1 wt.%) can significantly improve the density of the specimens and their microwave dielectric properties. Tremendous sintering temperature reduction can be achieved due to the liquid phase effect of CuO addition observed by scanning electronic microscopy (SEM). The sintered samples exhibit excellent microwave dielectric properties, which depend upon the liquid phase and the sintering temperature. With 0.5 wt.% CuO addition, MgTa2O6 ceramic can be sintered at 1400 °C and possesses a dielectric constant (εr) of 28, a Q × f value of 58000 GHz and a temperature coefficient of resonant frequency (τf) of 18 ppm/°C.",

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AU - Chiang, Kuo Hau

AU - Huang, Chi-Yuen

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N2 - The effect of CuO addition on the microstructures and the microwave dielectric properties of MgTa2O6 ceramics has been investigated. It is found that low level-doping of CuO (up to 1 wt.%) can significantly improve the density of the specimens and their microwave dielectric properties. Tremendous sintering temperature reduction can be achieved due to the liquid phase effect of CuO addition observed by scanning electronic microscopy (SEM). The sintered samples exhibit excellent microwave dielectric properties, which depend upon the liquid phase and the sintering temperature. With 0.5 wt.% CuO addition, MgTa2O6 ceramic can be sintered at 1400 °C and possesses a dielectric constant (εr) of 28, a Q × f value of 58000 GHz and a temperature coefficient of resonant frequency (τf) of 18 ppm/°C.

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