The effects of V2O5 addition on the microwave dielectric properties and the microstructures of (Zr0.8, Sn0.2)TiO4 ceramics been investigated. It is found that low-level doping of ZnO (1 wt%) and V2O5 (up to 2 wt%) can significantly improve the densification ability and the dielectric properties of (Zr0.8, Sn0.2)TiO4 ceramics. (Zr0.8, Sn0.2)TiO4 ceramics with additives could be sintered to a theoretical density higher than 95% at 1300°C due to the liquid-phase effect of V2O5 addition. The dielectric constant (εr) increased with increasing sintering temperature and saturated at 1300°C. The temperature coefficient of resonant frequency (τf) was not significantly affected while the unloaded quality factor Q was promoted by V2O5 addition. The εr value of 37.3, the Q × f value of 51500 (at 7 GHz) and the τf value of -2.1 ppm/°C were obtained for the 1 wt% ZnO-doped (Zr0.8, Sn0.2)TiO4 ceramics with 1 wt% V2O5 addition sintered at 1300°C.
|Number of pages||5|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||2 A|
|Publication status||Published - 2001 Feb|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)