Microwave dielectric properties and microstructures of V2O5-modified Zr0.8Sn0.2TiO4 ceramics

C. L. Huang, M. H. Weng, C. C. Wu, C. C. Wei

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Abstract

The effects of V2O5 addition on the microwave dielectric properties and the microstructures of (Zr0.8, Sn0.2)TiO4 ceramics been investigated. It is found that low-level doping of ZnO (1 wt%) and V2O5 (up to 2 wt%) can significantly improve the densification ability and the dielectric properties of (Zr0.8, Sn0.2)TiO4 ceramics. (Zr0.8, Sn0.2)TiO4 ceramics with additives could be sintered to a theoretical density higher than 95% at 1300°C due to the liquid-phase effect of V2O5 addition. The dielectric constant (εr) increased with increasing sintering temperature and saturated at 1300°C. The temperature coefficient of resonant frequency (τf) was not significantly affected while the unloaded quality factor Q was promoted by V2O5 addition. The εr value of 37.3, the Q × f value of 51500 (at 7 GHz) and the τf value of -2.1 ppm/°C were obtained for the 1 wt% ZnO-doped (Zr0.8, Sn0.2)TiO4 ceramics with 1 wt% V2O5 addition sintered at 1300°C.

Original languageEnglish
Pages (from-to)698-702
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number2 A
DOIs
Publication statusPublished - 2001 Feb

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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