Microwave dielectric properties of B2O3 doped LaAlO3 ceramics at low sintering temperature

Cheng Shing Hsu, Cheng Liang Huang, Kuo Hau Chiang

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10 Citations (Scopus)


The microwave dielectric properties and the microstructures of LaAlO3 ceramics with B2O3 additions (0.25-1 wt%) prepared with conventional solid-state route have been investigated. Doping with B2O3 (up to 0.5 wt%) can effectively promote the densification of LaAlO3 ceramics. It is found that LaAlO3 ceramics can be sintered at 1400°C due to the liquid phase effect of B2O3 addition. The Q × f value as well as the dielectric constant decreases at higher B2O3 doping level (1 wt%) due to the increase of boundary phases. At 1460°C, LaAlO3 ceramics with 0.5 wt% B2O3 addition possesses a dielectric constant (εr) of 22.9, a Q × f value of 44700 (at 9 GHz) and a temperature coefficients of resonant frequency (τf) of -36 ppm/°C. The B2O3-doped LaAlO3 ceramics can find applications in microwave devices requiring low sintering temperature.

Original languageEnglish
Pages (from-to)3495-3500
Number of pages6
JournalJournal of Materials Science
Issue number16
Publication statusPublished - 2003 Aug 15

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering


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