Microwave dielectric properties of B2O3 doped LaAlO3 ceramics at low sintering temperature

Cheng Shing Hsu; Cheng Liang Huang; Kuo Hau Chiang

doi:10.1023/A:1025113204419

Microwave dielectric properties of B₂O₃ doped LaAlO₃ ceramics at low sintering temperature

Cheng Shing Hsu, Cheng Liang Huang, Kuo Hau Chiang

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The microwave dielectric properties and the microstructures of LaAlO₃ ceramics with B₂O₃ additions (0.25-1 wt%) prepared with conventional solid-state route have been investigated. Doping with B₂O₃ (up to 0.5 wt%) can effectively promote the densification of LaAlO₃ ceramics. It is found that LaAlO₃ ceramics can be sintered at 1400°C due to the liquid phase effect of B₂O₃ addition. The Q × f value as well as the dielectric constant decreases at higher B₂O₃ doping level (1 wt%) due to the increase of boundary phases. At 1460°C, LaAlO₃ ceramics with 0.5 wt% B₂O₃ addition possesses a dielectric constant (ε_r) of 22.9, a Q × f value of 44700 (at 9 GHz) and a temperature coefficients of resonant frequency (τ_f) of -36 ppm/°C. The B₂O₃-doped LaAlO₃ ceramics can find applications in microwave devices requiring low sintering temperature.

Original language	English
Pages (from-to)	3495-3500
Number of pages	6
Journal	Journal of Materials Science
Volume	38
Issue number	16
DOIs	https://doi.org/10.1023/A:1025113204419
Publication status	Published - 2003 Aug 15

All Science Journal Classification (ASJC) codes

General Materials Science
Mechanics of Materials
Mechanical Engineering

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title = "Microwave dielectric properties of B2O3 doped LaAlO3 ceramics at low sintering temperature",

abstract = "The microwave dielectric properties and the microstructures of LaAlO3 ceramics with B2O3 additions (0.25-1 wt%) prepared with conventional solid-state route have been investigated. Doping with B2O3 (up to 0.5 wt%) can effectively promote the densification of LaAlO3 ceramics. It is found that LaAlO3 ceramics can be sintered at 1400°C due to the liquid phase effect of B2O3 addition. The Q × f value as well as the dielectric constant decreases at higher B2O3 doping level (1 wt%) due to the increase of boundary phases. At 1460°C, LaAlO3 ceramics with 0.5 wt% B2O3 addition possesses a dielectric constant (εr) of 22.9, a Q × f value of 44700 (at 9 GHz) and a temperature coefficients of resonant frequency (τf) of -36 ppm/°C. The B2O3-doped LaAlO3 ceramics can find applications in microwave devices requiring low sintering temperature.",

author = "Hsu, {Cheng Shing} and Huang, {Cheng Liang} and Chiang, {Kuo Hau}",

note = "Funding Information: This work was supported by the National Science Council of the Republic of China under grant NSC90-2213-E-006-061.",

year = "2003",

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doi = "10.1023/A:1025113204419",

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T1 - Microwave dielectric properties of B2O3 doped LaAlO3 ceramics at low sintering temperature

AU - Hsu, Cheng Shing

AU - Huang, Cheng Liang

AU - Chiang, Kuo Hau

N1 - Funding Information: This work was supported by the National Science Council of the Republic of China under grant NSC90-2213-E-006-061.

PY - 2003/8/15

Y1 - 2003/8/15

N2 - The microwave dielectric properties and the microstructures of LaAlO3 ceramics with B2O3 additions (0.25-1 wt%) prepared with conventional solid-state route have been investigated. Doping with B2O3 (up to 0.5 wt%) can effectively promote the densification of LaAlO3 ceramics. It is found that LaAlO3 ceramics can be sintered at 1400°C due to the liquid phase effect of B2O3 addition. The Q × f value as well as the dielectric constant decreases at higher B2O3 doping level (1 wt%) due to the increase of boundary phases. At 1460°C, LaAlO3 ceramics with 0.5 wt% B2O3 addition possesses a dielectric constant (εr) of 22.9, a Q × f value of 44700 (at 9 GHz) and a temperature coefficients of resonant frequency (τf) of -36 ppm/°C. The B2O3-doped LaAlO3 ceramics can find applications in microwave devices requiring low sintering temperature.

AB - The microwave dielectric properties and the microstructures of LaAlO3 ceramics with B2O3 additions (0.25-1 wt%) prepared with conventional solid-state route have been investigated. Doping with B2O3 (up to 0.5 wt%) can effectively promote the densification of LaAlO3 ceramics. It is found that LaAlO3 ceramics can be sintered at 1400°C due to the liquid phase effect of B2O3 addition. The Q × f value as well as the dielectric constant decreases at higher B2O3 doping level (1 wt%) due to the increase of boundary phases. At 1460°C, LaAlO3 ceramics with 0.5 wt% B2O3 addition possesses a dielectric constant (εr) of 22.9, a Q × f value of 44700 (at 9 GHz) and a temperature coefficients of resonant frequency (τf) of -36 ppm/°C. The B2O3-doped LaAlO3 ceramics can find applications in microwave devices requiring low sintering temperature.

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Microwave dielectric properties of B₂O₃ doped LaAlO₃ ceramics at low sintering temperature

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