Microwave dielectric properties of CuO-doped La(Co1/2Ti 1/2)O3 ceramics

Ching Fang Tseng, Cheng Liang Huang

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2 Citations (Scopus)

Abstract

The microwave dielectric properties and microstructures of La(Co 1/2Ti1/2)O3 ceramics prepared by the conventional solid-state route have been studied. The prepared La(Co 1/2Ti1/2)O3 was a mixture of Co and Ti showing a 1 : 1 order in the B-site. Doping with CuO (up to 0.75 wt %) can effectively promote the densiflcation of La(Co1/2Ti1/2)O3 ceramics at a low sintering temperature. At 1380°C, La(Co 1/2Ti1/2)O3 ceramics with 0.25 wt% CuO addition possesses a dielectric constant (εr) of 29.8, a Q × f of 64000 GHz (at 8 GHz) and a temperature coefficient of resonant frequency (τf) of -56 ppm/°C. The CuO-doped La(Co1/2Ti 1/2)O3 ceramics can have applications in microwave devices requiring low sintering temperatures.

Original languageEnglish
Pages (from-to)826-830
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number2 A
DOIs
Publication statusPublished - 2006 Feb 8

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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