Microwave dielectric properties of CuO-doped La(Co1/2Ti 1/2)O3 ceramics

Ching Fang Tseng; Cheng Liang Huang

doi:10.1143/JJAP.45.826

Microwave dielectric properties of CuO-doped La(Co_1/2Ti _1/2)O₃ ceramics

Ching Fang Tseng, Cheng Liang Huang

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The microwave dielectric properties and microstructures of La(Co _1/2Ti_1/2)O₃ ceramics prepared by the conventional solid-state route have been studied. The prepared La(Co _1/2Ti_1/2)O₃ was a mixture of Co and Ti showing a 1 : 1 order in the B-site. Doping with CuO (up to 0.75 wt %) can effectively promote the densiflcation of La(Co_1/2Ti_1/2)O₃ ceramics at a low sintering temperature. At 1380°C, La(Co _1/2Ti_1/2)O₃ ceramics with 0.25 wt% CuO addition possesses a dielectric constant (ε_r) of 29.8, a Q × f of 64000 GHz (at 8 GHz) and a temperature coefficient of resonant frequency (τ_f) of -56 ppm/°C. The CuO-doped La(Co_1/2Ti _1/2)O₃ ceramics can have applications in microwave devices requiring low sintering temperatures.

Original language	English
Pages (from-to)	826-830
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	45
Issue number	2 A
DOIs	https://doi.org/10.1143/JJAP.45.826
Publication status	Published - 2006 Feb 8

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

Access to Document

10.1143/JJAP.45.826

Cite this

@article{ece23e48b75b401fa1a6b6cb935a5cae,

title = "Microwave dielectric properties of CuO-doped La(Co1/2Ti 1/2)O3 ceramics",

abstract = "The microwave dielectric properties and microstructures of La(Co 1/2Ti1/2)O3 ceramics prepared by the conventional solid-state route have been studied. The prepared La(Co 1/2Ti1/2)O3 was a mixture of Co and Ti showing a 1 : 1 order in the B-site. Doping with CuO (up to 0.75 wt %) can effectively promote the densiflcation of La(Co1/2Ti1/2)O3 ceramics at a low sintering temperature. At 1380°C, La(Co 1/2Ti1/2)O3 ceramics with 0.25 wt% CuO addition possesses a dielectric constant (εr) of 29.8, a Q × f of 64000 GHz (at 8 GHz) and a temperature coefficient of resonant frequency (τf) of -56 ppm/°C. The CuO-doped La(Co1/2Ti 1/2)O3 ceramics can have applications in microwave devices requiring low sintering temperatures.",

author = "Tseng, {Ching Fang} and Huang, {Cheng Liang}",

year = "2006",

month = feb,

day = "8",

doi = "10.1143/JJAP.45.826",

language = "English",

volume = "45",

pages = "826--830",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "2 A",

}

TY - JOUR

T1 - Microwave dielectric properties of CuO-doped La(Co1/2Ti 1/2)O3 ceramics

AU - Tseng, Ching Fang

AU - Huang, Cheng Liang

PY - 2006/2/8

Y1 - 2006/2/8

N2 - The microwave dielectric properties and microstructures of La(Co 1/2Ti1/2)O3 ceramics prepared by the conventional solid-state route have been studied. The prepared La(Co 1/2Ti1/2)O3 was a mixture of Co and Ti showing a 1 : 1 order in the B-site. Doping with CuO (up to 0.75 wt %) can effectively promote the densiflcation of La(Co1/2Ti1/2)O3 ceramics at a low sintering temperature. At 1380°C, La(Co 1/2Ti1/2)O3 ceramics with 0.25 wt% CuO addition possesses a dielectric constant (εr) of 29.8, a Q × f of 64000 GHz (at 8 GHz) and a temperature coefficient of resonant frequency (τf) of -56 ppm/°C. The CuO-doped La(Co1/2Ti 1/2)O3 ceramics can have applications in microwave devices requiring low sintering temperatures.

AB - The microwave dielectric properties and microstructures of La(Co 1/2Ti1/2)O3 ceramics prepared by the conventional solid-state route have been studied. The prepared La(Co 1/2Ti1/2)O3 was a mixture of Co and Ti showing a 1 : 1 order in the B-site. Doping with CuO (up to 0.75 wt %) can effectively promote the densiflcation of La(Co1/2Ti1/2)O3 ceramics at a low sintering temperature. At 1380°C, La(Co 1/2Ti1/2)O3 ceramics with 0.25 wt% CuO addition possesses a dielectric constant (εr) of 29.8, a Q × f of 64000 GHz (at 8 GHz) and a temperature coefficient of resonant frequency (τf) of -56 ppm/°C. The CuO-doped La(Co1/2Ti 1/2)O3 ceramics can have applications in microwave devices requiring low sintering temperatures.

UR - http://www.scopus.com/inward/record.url?scp=32244433343&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=32244433343&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.826

DO - 10.1143/JJAP.45.826

M3 - Article

AN - SCOPUS:32244433343

SN - 0021-4922

VL - 45

SP - 826

EP - 830

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 2 A

ER -

Microwave dielectric properties of CuO-doped La(Co_1/2Ti _1/2)O₃ ceramics

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this