Microwave plasma enhanced chemical vapor deposition of nanocrystalline diamond films by bias-enhanced nucleation and bias-enhanced growth

Yueh Chieh Chu, Yon-Hua Tzeng, Orlando Auciello

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Effects of biasing voltage-current relationship on microwave plasma enhanced chemical vapor deposition of ultrananocrystalline diamond (UNCD) films on (100) silicon in hydrogen diluted methane by bias-enhanced nucleation and bias-enhanced growth processes are reported. Three biasing methods are applied to study their effects on nucleation, growth, and microstructures of deposited UNCD films. Method A employs 320 mA constant biasing current and a negative biasing voltage decreasing from -490 V to -375 V for silicon substrates pre-heated to 800 °C. Method B employs 400 mA constant biasing current and a decreasing negative biasing voltage from -375 V to -390 V for silicon pre-heated to 900 °C. Method C employs -350 V constant biasing voltage and an increasing biasing current up to 400 mA for silicon pre-heated to 800 °C. UNCD nanopillars, merged clusters, and dense films with smooth surface morphology are deposited by the biasing methods A, B, and C, respectively. Effects of ion energy and flux controlled by the biasing voltage and current, respectively, on nucleation, growth, microstructures, surface morphologies, and UNCD contents are confirmed by scanning electron microscopy, high-resolution transmission-electron-microscopy, and UV Raman scattering.

Original languageEnglish
Article number024308
JournalJournal of Applied Physics
Volume115
Issue number2
DOIs
Publication statusPublished - 2014 Jan 14

Fingerprint

diamond films
vapor deposition
nucleation
microwaves
electric potential
silicon
diamonds
microstructure
methane
Raman spectra
transmission electron microscopy
scanning electron microscopy
high resolution
hydrogen
ions
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "Microwave plasma enhanced chemical vapor deposition of nanocrystalline diamond films by bias-enhanced nucleation and bias-enhanced growth",
abstract = "Effects of biasing voltage-current relationship on microwave plasma enhanced chemical vapor deposition of ultrananocrystalline diamond (UNCD) films on (100) silicon in hydrogen diluted methane by bias-enhanced nucleation and bias-enhanced growth processes are reported. Three biasing methods are applied to study their effects on nucleation, growth, and microstructures of deposited UNCD films. Method A employs 320 mA constant biasing current and a negative biasing voltage decreasing from -490 V to -375 V for silicon substrates pre-heated to 800 °C. Method B employs 400 mA constant biasing current and a decreasing negative biasing voltage from -375 V to -390 V for silicon pre-heated to 900 °C. Method C employs -350 V constant biasing voltage and an increasing biasing current up to 400 mA for silicon pre-heated to 800 °C. UNCD nanopillars, merged clusters, and dense films with smooth surface morphology are deposited by the biasing methods A, B, and C, respectively. Effects of ion energy and flux controlled by the biasing voltage and current, respectively, on nucleation, growth, microstructures, surface morphologies, and UNCD contents are confirmed by scanning electron microscopy, high-resolution transmission-electron-microscopy, and UV Raman scattering.",
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Microwave plasma enhanced chemical vapor deposition of nanocrystalline diamond films by bias-enhanced nucleation and bias-enhanced growth. / Chu, Yueh Chieh; Tzeng, Yon-Hua; Auciello, Orlando.

In: Journal of Applied Physics, Vol. 115, No. 2, 024308, 14.01.2014.

Research output: Contribution to journalArticle

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