MICROWAVE PLASMA ETCHING OF PHOTORESIST AND POLYIMIDE IN AIR AND OXYGEN.

Yon-Hua Tzeng; T. H. Lin; M. A. Belser; T. A. Roppel

MICROWAVE PLASMA ETCHING OF PHOTORESIST AND POLYIMIDE IN AIR AND OXYGEN.

Yon-Hua Tzeng, T. H. Lin, M. A. Belser, T. A. Roppel

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A microwave oven has been modified and used as a microwave plasma generator to generate a burst of microwave excitation at 2. 45 GHz and at a repetition rate of 60 Hz. This plasma is characterized and then applied to etch photoresist and polyimide in a downstream plasma reactor apparatus. Photoresist and polyimide etch rates on the order of micrometers can be achieved in the downstream of the pulsed 625-W microwave plasma. With this capability standard photoresist and polyimide can be etched in a couple of minutes.

Original language	English
Title of host publication	Unknown Host Publication Title
Publisher	IEEE
Pages	155-160
Number of pages	6
Publication status	Published - 1987

All Science Journal Classification (ASJC) codes

General Engineering

Cite this

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title = "MICROWAVE PLASMA ETCHING OF PHOTORESIST AND POLYIMIDE IN AIR AND OXYGEN.",

abstract = "A microwave oven has been modified and used as a microwave plasma generator to generate a burst of microwave excitation at 2. 45 GHz and at a repetition rate of 60 Hz. This plasma is characterized and then applied to etch photoresist and polyimide in a downstream plasma reactor apparatus. Photoresist and polyimide etch rates on the order of micrometers can be achieved in the downstream of the pulsed 625-W microwave plasma. With this capability standard photoresist and polyimide can be etched in a couple of minutes.",

author = "Yon-Hua Tzeng and Lin, {T. H.} and Belser, {M. A.} and Roppel, {T. A.}",

year = "1987",

language = "English",

pages = "155--160",

booktitle = "Unknown Host Publication Title",

publisher = "IEEE",

}

TY - GEN

T1 - MICROWAVE PLASMA ETCHING OF PHOTORESIST AND POLYIMIDE IN AIR AND OXYGEN.

AU - Tzeng, Yon-Hua

AU - Lin, T. H.

AU - Belser, M. A.

AU - Roppel, T. A.

PY - 1987

Y1 - 1987

N2 - A microwave oven has been modified and used as a microwave plasma generator to generate a burst of microwave excitation at 2. 45 GHz and at a repetition rate of 60 Hz. This plasma is characterized and then applied to etch photoresist and polyimide in a downstream plasma reactor apparatus. Photoresist and polyimide etch rates on the order of micrometers can be achieved in the downstream of the pulsed 625-W microwave plasma. With this capability standard photoresist and polyimide can be etched in a couple of minutes.

AB - A microwave oven has been modified and used as a microwave plasma generator to generate a burst of microwave excitation at 2. 45 GHz and at a repetition rate of 60 Hz. This plasma is characterized and then applied to etch photoresist and polyimide in a downstream plasma reactor apparatus. Photoresist and polyimide etch rates on the order of micrometers can be achieved in the downstream of the pulsed 625-W microwave plasma. With this capability standard photoresist and polyimide can be etched in a couple of minutes.

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M3 - Conference contribution

AN - SCOPUS:0023229741

SP - 155

EP - 160

BT - Unknown Host Publication Title

PB - IEEE

ER -

MICROWAVE PLASMA ETCHING OF PHOTORESIST AND POLYIMIDE IN AIR AND OXYGEN.

Abstract

All Science Journal Classification (ASJC) codes

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