MICROWAVE PLASMA ETCHING OF PHOTORESIST AND POLYIMIDE IN AIR AND OXYGEN.

Yon-Hua Tzeng, T. H. Lin, M. A. Belser, T. A. Roppel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A microwave oven has been modified and used as a microwave plasma generator to generate a burst of microwave excitation at 2. 45 GHz and at a repetition rate of 60 Hz. This plasma is characterized and then applied to etch photoresist and polyimide in a downstream plasma reactor apparatus. Photoresist and polyimide etch rates on the order of micrometers can be achieved in the downstream of the pulsed 625-W microwave plasma. With this capability standard photoresist and polyimide can be etched in a couple of minutes.

Original languageEnglish
Title of host publicationUnknown Host Publication Title
PublisherIEEE
Pages155-160
Number of pages6
Publication statusPublished - 1987

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Tzeng, Y-H., Lin, T. H., Belser, M. A., & Roppel, T. A. (1987). MICROWAVE PLASMA ETCHING OF PHOTORESIST AND POLYIMIDE IN AIR AND OXYGEN. In Unknown Host Publication Title (pp. 155-160). IEEE.