A microwave oven has been modified and used as a microwave plasma generator to generate a burst of microwave excitation at 2. 45 GHz and at a repetition rate of 60 Hz. This plasma is characterized and then applied to etch photoresist and polyimide in a downstream plasma reactor apparatus. Photoresist and polyimide etch rates on the order of micrometers can be achieved in the downstream of the pulsed 625-W microwave plasma. With this capability standard photoresist and polyimide can be etched in a couple of minutes.
|Title of host publication||Unknown Host Publication Title|
|Number of pages||6|
|Publication status||Published - 1987|
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