Midinfrared InAsGaSb type-II superlattice interband tunneling photodetectors

Shin Mou; Adam Petschke; Qi Lou; Shun Lien Chuang; Jian V. Li; Cory J. Hill

doi:10.1063/1.2909538

Midinfrared InAsGaSb type-II superlattice interband tunneling photodetectors

Shin Mou, Adam Petschke, Qi Lou, Shun Lien Chuang, Jian V. Li, Cory J. Hill

Department of Aeronautics and Astronautics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

A photovoltaic InAsGaSb superlattice photodetector based on electron transfer using quantum energy levels and interband tunneling is presented: an interband tunneling detector. The quantum efficiency is about 7%, which is improved by ten times compared to the previous published interband cascade detectors. The R0 A product is 0.03 cm2 at 200 K and is comparable to that of state-of-the-art InAsGaSb superlattice photodiodes. Since the interband tunneling detector works without an applied bias, it is promising for small-pixel focal plane array applications.

Original language	English
Article number	153505
Journal	Applied Physics Letters
Volume	92
Issue number	15
DOIs	https://doi.org/10.1063/1.2909538
Publication status	Published - 2008

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2909538

Cite this

@article{d47b4b6c1d0940298261428dd1da88b2,

title = "Midinfrared InAsGaSb type-II superlattice interband tunneling photodetectors",

abstract = "A photovoltaic InAsGaSb superlattice photodetector based on electron transfer using quantum energy levels and interband tunneling is presented: an interband tunneling detector. The quantum efficiency is about 7%, which is improved by ten times compared to the previous published interband cascade detectors. The R0 A product is 0.03 cm2 at 200 K and is comparable to that of state-of-the-art InAsGaSb superlattice photodiodes. Since the interband tunneling detector works without an applied bias, it is promising for small-pixel focal plane array applications.",

author = "Shin Mou and Adam Petschke and Qi Lou and Chuang, {Shun Lien} and Li, {Jian V.} and Hill, {Cory J.}",

note = "Funding Information: The work at University of Illinois was supported by Army Research Office under Grant No. ARMY W911NF-06-1-0353. Additional research described in this letter was carried out at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration.",

year = "2008",

doi = "10.1063/1.2909538",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "15",

}

TY - JOUR

T1 - Midinfrared InAsGaSb type-II superlattice interband tunneling photodetectors

AU - Mou, Shin

AU - Petschke, Adam

AU - Lou, Qi

AU - Chuang, Shun Lien

AU - Li, Jian V.

AU - Hill, Cory J.

N1 - Funding Information: The work at University of Illinois was supported by Army Research Office under Grant No. ARMY W911NF-06-1-0353. Additional research described in this letter was carried out at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration.

PY - 2008

Y1 - 2008

N2 - A photovoltaic InAsGaSb superlattice photodetector based on electron transfer using quantum energy levels and interband tunneling is presented: an interband tunneling detector. The quantum efficiency is about 7%, which is improved by ten times compared to the previous published interband cascade detectors. The R0 A product is 0.03 cm2 at 200 K and is comparable to that of state-of-the-art InAsGaSb superlattice photodiodes. Since the interband tunneling detector works without an applied bias, it is promising for small-pixel focal plane array applications.

AB - A photovoltaic InAsGaSb superlattice photodetector based on electron transfer using quantum energy levels and interband tunneling is presented: an interband tunneling detector. The quantum efficiency is about 7%, which is improved by ten times compared to the previous published interband cascade detectors. The R0 A product is 0.03 cm2 at 200 K and is comparable to that of state-of-the-art InAsGaSb superlattice photodiodes. Since the interband tunneling detector works without an applied bias, it is promising for small-pixel focal plane array applications.

UR - http://www.scopus.com/inward/record.url?scp=42349087922&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42349087922&partnerID=8YFLogxK

U2 - 10.1063/1.2909538

DO - 10.1063/1.2909538

M3 - Article

AN - SCOPUS:42349087922

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 153505

ER -

Midinfrared InAsGaSb type-II superlattice interband tunneling photodetectors

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this