Minority carrier diffusion length and lifetime for electrons in a type-II InAs/GaSb superlattice photodiode

Jian V. Li, Shun Lien Chuang, Eric M. Jackson, Edward Aifer

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Abstract

The use of electron-beam-induced current (EBIC) technique to investigate carrier transport characteristics in a type-II InAs/GaSb superlattice photodiode with cutoff wavelength at 7.7 μm was discussed. It was observed that, to simulate the EBIC current on both sides of the p-n junctions, a theoretical model that includes an extended generation source and depletion region was used. It was also observed that the electron minority diffusion length in the p-superlattice, L e, was extracted from the simulation, from which the electron lifetime τ e was obtained. The results show that the EBIC measurement was a useful method to extract fundamental parameters in T2-SL photodiode devices.

Original languageEnglish
Pages (from-to)1984-1986
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number11
DOIs
Publication statusPublished - 2004 Sep 13

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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