Minority carrier diffusion length and lifetime for electrons in a type-II InAs/GaSb superlattice photodiode

Jian V. Li; Shun Lien Chuang; Eric M. Jackson; Edward Aifer

doi:10.1063/1.1787598

Minority carrier diffusion length and lifetime for electrons in a type-II InAs/GaSb superlattice photodiode

Jian V. Li, Shun Lien Chuang, Eric M. Jackson, Edward Aifer

Department of Aeronautics and Astronautics

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

The use of electron-beam-induced current (EBIC) technique to investigate carrier transport characteristics in a type-II InAs/GaSb superlattice photodiode with cutoff wavelength at 7.7 μm was discussed. It was observed that, to simulate the EBIC current on both sides of the p-n junctions, a theoretical model that includes an extended generation source and depletion region was used. It was also observed that the electron minority diffusion length in the p-superlattice, L _e, was extracted from the simulation, from which the electron lifetime τ _e was obtained. The results show that the EBIC measurement was a useful method to extract fundamental parameters in T2-SL photodiode devices.

Original language	English
Pages (from-to)	1984-1986
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	11
DOIs	https://doi.org/10.1063/1.1787598
Publication status	Published - 2004 Sep 13

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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@article{05134b1967b54ea9b047e79e6c859942,

title = "Minority carrier diffusion length and lifetime for electrons in a type-II InAs/GaSb superlattice photodiode",

abstract = "The use of electron-beam-induced current (EBIC) technique to investigate carrier transport characteristics in a type-II InAs/GaSb superlattice photodiode with cutoff wavelength at 7.7 μm was discussed. It was observed that, to simulate the EBIC current on both sides of the p-n junctions, a theoretical model that includes an extended generation source and depletion region was used. It was also observed that the electron minority diffusion length in the p-superlattice, L e, was extracted from the simulation, from which the electron lifetime τ e was obtained. The results show that the EBIC measurement was a useful method to extract fundamental parameters in T2-SL photodiode devices.",

author = "Li, {Jian V.} and Chuang, {Shun Lien} and Jackson, {Eric M.} and Edward Aifer",

note = "Funding Information: The work at University of Illinois was supported by the MURI project sponsored by Army Research Office under Grant No. DAAD19-01-1-0591. The authors wish to thank Dr. J. Mabon for his help on EBIC experiment. The EBIC measurement was carried out at the Center for Microanalysis of Materials, University of Illinois, which is partially supported by the U. S. Department of Energy under Grant No. DEFG02-91-ER45439.",

year = "2004",

month = sep,

day = "13",

doi = "10.1063/1.1787598",

language = "English",

volume = "85",

pages = "1984--1986",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "11",

}

TY - JOUR

T1 - Minority carrier diffusion length and lifetime for electrons in a type-II InAs/GaSb superlattice photodiode

AU - Li, Jian V.

AU - Chuang, Shun Lien

AU - Jackson, Eric M.

AU - Aifer, Edward

N1 - Funding Information: The work at University of Illinois was supported by the MURI project sponsored by Army Research Office under Grant No. DAAD19-01-1-0591. The authors wish to thank Dr. J. Mabon for his help on EBIC experiment. The EBIC measurement was carried out at the Center for Microanalysis of Materials, University of Illinois, which is partially supported by the U. S. Department of Energy under Grant No. DEFG02-91-ER45439.

PY - 2004/9/13

Y1 - 2004/9/13

N2 - The use of electron-beam-induced current (EBIC) technique to investigate carrier transport characteristics in a type-II InAs/GaSb superlattice photodiode with cutoff wavelength at 7.7 μm was discussed. It was observed that, to simulate the EBIC current on both sides of the p-n junctions, a theoretical model that includes an extended generation source and depletion region was used. It was also observed that the electron minority diffusion length in the p-superlattice, L e, was extracted from the simulation, from which the electron lifetime τ e was obtained. The results show that the EBIC measurement was a useful method to extract fundamental parameters in T2-SL photodiode devices.

AB - The use of electron-beam-induced current (EBIC) technique to investigate carrier transport characteristics in a type-II InAs/GaSb superlattice photodiode with cutoff wavelength at 7.7 μm was discussed. It was observed that, to simulate the EBIC current on both sides of the p-n junctions, a theoretical model that includes an extended generation source and depletion region was used. It was also observed that the electron minority diffusion length in the p-superlattice, L e, was extracted from the simulation, from which the electron lifetime τ e was obtained. The results show that the EBIC measurement was a useful method to extract fundamental parameters in T2-SL photodiode devices.

UR - http://www.scopus.com/inward/record.url?scp=5444231826&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=5444231826&partnerID=8YFLogxK

U2 - 10.1063/1.1787598

DO - 10.1063/1.1787598

M3 - Article

AN - SCOPUS:5444231826

VL - 85

SP - 1984

EP - 1986

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

ER -

Minority carrier diffusion length and lifetime for electrons in a type-II InAs/GaSb superlattice photodiode

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