Abstract
The use of electron-beam-induced current (EBIC) technique to investigate carrier transport characteristics in a type-II InAs/GaSb superlattice photodiode with cutoff wavelength at 7.7 μm was discussed. It was observed that, to simulate the EBIC current on both sides of the p-n junctions, a theoretical model that includes an extended generation source and depletion region was used. It was also observed that the electron minority diffusion length in the p-superlattice, L e, was extracted from the simulation, from which the electron lifetime τ e was obtained. The results show that the EBIC measurement was a useful method to extract fundamental parameters in T2-SL photodiode devices.
Original language | English |
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Pages (from-to) | 1984-1986 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 85 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2004 Sep 13 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)