A scheme for V-band band-pass filter (BPF) with narrowband performance and compact chip size is implemented using the 0.15 μm GaAs pHEMT process. Based on the even- and odd-mode analysis in V-band BPF, the feature of the third harmonic suppression can be concisely verified. The proposed structure provides excellent selectivity at both sides of the passband and facilitates the realization of third harmonic suppression of up to 20 dB. Good return loss and reasonable insertion loss over the desired passband are also shown.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering