Mobility enhancement in a highly strained δ-doped In0.9 Ga0.1 P/In0.75 Ga0.25 As/In0.53 Ga0.47 As/InP heterostructure

R. T. Hsu, W. Lin, M. J. Kao, Y. H. Wu, Wei-Chou Hsu

Research output: Contribution to journalArticle

Abstract

An In0.9 Ga0.1 P/In0.75 Ga0.53 Ga0.47 As/InP heterostructure grown by low-prssure metal-organic chemical vapor deposition exhibits a mobility as high as 7910 cm2V-1s-1 with a two-dimensional electron gas (2DEG) concentration of 3.35 × 1012 cm-2 at 300 K (99 300 cm2 V-1 s-1, 1.76 × 1012 cm-2 at 77 K). Photoluminescence analysis shows good carrier confinement in this structure.

Original languageEnglish
Pages (from-to)164-166
Number of pages3
JournalThin Solid Films
Volume245
Issue number1-2
DOIs
Publication statusPublished - 1994 Jun 1

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Two dimensional electron gas
metalorganic chemical vapor deposition
electron gas
Heterojunctions
Organic Chemicals
photoluminescence
augmentation
Organic chemicals
Chemical vapor deposition
Photoluminescence
Metals

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

@article{555faa06932a4860b22b4011396ead75,
title = "Mobility enhancement in a highly strained δ-doped In0.9 Ga0.1 P/In0.75 Ga0.25 As/In0.53 Ga0.47 As/InP heterostructure",
abstract = "An In0.9 Ga0.1 P/In0.75 Ga0.53 Ga0.47 As/InP heterostructure grown by low-prssure metal-organic chemical vapor deposition exhibits a mobility as high as 7910 cm2V-1s-1 with a two-dimensional electron gas (2DEG) concentration of 3.35 × 1012 cm-2 at 300 K (99 300 cm2 V-1 s-1, 1.76 × 1012 cm-2 at 77 K). Photoluminescence analysis shows good carrier confinement in this structure.",
author = "Hsu, {R. T.} and W. Lin and Kao, {M. J.} and Wu, {Y. H.} and Wei-Chou Hsu",
year = "1994",
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day = "1",
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language = "English",
volume = "245",
pages = "164--166",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1-2",

}

Mobility enhancement in a highly strained δ-doped In0.9 Ga0.1 P/In0.75 Ga0.25 As/In0.53 Ga0.47 As/InP heterostructure. / Hsu, R. T.; Lin, W.; Kao, M. J.; Wu, Y. H.; Hsu, Wei-Chou.

In: Thin Solid Films, Vol. 245, No. 1-2, 01.06.1994, p. 164-166.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Mobility enhancement in a highly strained δ-doped In0.9 Ga0.1 P/In0.75 Ga0.25 As/In0.53 Ga0.47 As/InP heterostructure

AU - Hsu, R. T.

AU - Lin, W.

AU - Kao, M. J.

AU - Wu, Y. H.

AU - Hsu, Wei-Chou

PY - 1994/6/1

Y1 - 1994/6/1

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AB - An In0.9 Ga0.1 P/In0.75 Ga0.53 Ga0.47 As/InP heterostructure grown by low-prssure metal-organic chemical vapor deposition exhibits a mobility as high as 7910 cm2V-1s-1 with a two-dimensional electron gas (2DEG) concentration of 3.35 × 1012 cm-2 at 300 K (99 300 cm2 V-1 s-1, 1.76 × 1012 cm-2 at 77 K). Photoluminescence analysis shows good carrier confinement in this structure.

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