Mobility enhancement in double δ-doped GaAs/InxGa 1-xAs/GaAs pseudomorphic structures by grading the heterointerfaces

C. L. Wu, Wei-Chou Hsu, H. M. Shieh, Wen-Chau Liu

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A novel double δ-doped heterostructure employing symmetric graded InGaAs quantum wells as the active channel grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) has been successfully fabricated. The proposed symmetrically graded InGaAs pseudomorphic structure manifests significantly improved electron mobility as high as 5300 (26 000) cm 2/V s at 300 (77) K due to superior confinement and to the lower interface roughness scattering at GaAs/InGaAs heterointerfaces. We also carried out photoluminescence (PL) spectra and secondary-ion mass spectrometry (SIMS) profiles to confirm the quality of the proposed structures.

Original languageEnglish
Pages (from-to)3027-3029
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number22
DOIs
Publication statusPublished - 1994 Dec 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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