TY - JOUR
T1 - Mobility enhancement in highly strained δ-doped InP/InGaAs/InP heterostructure with ingap cap layer grown by low-pressure metalorganic chemical vapor deposition
AU - Hsu, Rong Tay
AU - Lln, Wei
AU - Hsu, Wei Chou
AU - Su, Jan Shing
PY - 1994/12
Y1 - 1994/12
N2 - Highly strained δ- and uniformly doped InP/InGaAs/InP high-electron-mobility transistor (HEMT) structures with InGaP cap layers were fabricated. Photoluminescence (PL), secondary ion mass spectrometry (SIMS) and Hall measurement were used to analyse these two structures. The δ-doped HEMT structure revealed higher mobilities than the uniformly doped HEMT's, especially at low temperature, due to the reduction of impurity scattering. The carrier concentrations and mobilities at 77 K were 2.7× 1012 cm-2 and 57861 cm2/v·s for the uniformly doped structure, and were 1.8× 1012 cm-2 and 99300 cm2/v·s for the δ-doped structure.
AB - Highly strained δ- and uniformly doped InP/InGaAs/InP high-electron-mobility transistor (HEMT) structures with InGaP cap layers were fabricated. Photoluminescence (PL), secondary ion mass spectrometry (SIMS) and Hall measurement were used to analyse these two structures. The δ-doped HEMT structure revealed higher mobilities than the uniformly doped HEMT's, especially at low temperature, due to the reduction of impurity scattering. The carrier concentrations and mobilities at 77 K were 2.7× 1012 cm-2 and 57861 cm2/v·s for the uniformly doped structure, and were 1.8× 1012 cm-2 and 99300 cm2/v·s for the δ-doped structure.
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U2 - 10.1143/JJAP.33.6514
DO - 10.1143/JJAP.33.6514
M3 - Article
AN - SCOPUS:84957327092
SN - 0021-4922
VL - 33
SP - 651
EP - 655
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 12R
ER -