Mobility enhancement in highly strained δ-doped InP/InGaAs/InP heterostructure with ingap cap layer grown by low-pressure metalorganic chemical vapor deposition

Rong Tay Hsu, Wei Lln, Wei Chou Hsu, Jan Shing Su

Research output: Contribution to journalArticle


Highly strained δ- and uniformly doped InP/InGaAs/InP high-electron-mobility transistor (HEMT) structures with InGaP cap layers were fabricated. Photoluminescence (PL), secondary ion mass spectrometry (SIMS) and Hall measurement were used to analyse these two structures. The δ-doped HEMT structure revealed higher mobilities than the uniformly doped HEMT's, especially at low temperature, due to the reduction of impurity scattering. The carrier concentrations and mobilities at 77 K were 2.7× 1012 cm-2 and 57861 cm2/v·s for the uniformly doped structure, and were 1.8× 1012 cm-2 and 99300 cm2/v·s for the δ-doped structure.

Original languageEnglish
Pages (from-to)651-655
Number of pages5
JournalJapanese Journal of Applied Physics
Issue number12R
Publication statusPublished - 1994 Dec


All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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